Kan-Hao Xue Publication


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	*Peer-reviewed journal papers \| Conference Shell DFT-1/2 \| Ferroelectrics**

	54. (2019b) Ya-Qian Song, Jun-Hui Yuan, Li-Heng Li, Ming Xu, Jia-Fu Wang, Kan-Hao Xue*, and Xiang-Shui Miao, KTlO: a metal shrouded 2D semiconductor with high carrier mobility and tunable magnetism, Nanoscale 11, 1131 (2019). Impact Factor: 8.307 Available operations: Cited by: On Google:

	53. (2019a) Jun-Hui Yuan, Ya-Qian Song, Qi Chen, Kan-Hao Xue, and Xiang-Shui Miao, Single-layer planar penta-X₂N₄ (X = Ni, Pd and Pt) as direct-bandgap semiconductors from first principle calculations, Applied Surface Science 469*, 456 (2019). Impact Factor: 7.392 Available operations: Cited by: On Google:

	52. (2018n) B. Wang, K. H. Xue, H. J. Sun, Z. N. Li, W. Wu, P. Yan, N. Liu, B. Y. Tian, X. X. Liu, and X. S. Miao, Performance enhancement of TaO_x resistive switching memory using graded oxygen content, Applied Physics Letters 113*, 183501 (2018). Impact Factor: 3.971 Available operations: Cited by: On Google:

	51. (2018m) Kan-Hao Xue, Yun Li, Hai-Lei Su, Jun-Hui Yuan, Yi Li, Zhuo-Rui Wang, Biao Zhang, and Xiang-Shui Miao, Theoretical investigation of the Ag filament morphology in conductive bridge random access memories, Journal of Applied Physics 124*, 152125 (2018). Impact Factor: 2.877 Available operations: Cited by: On Google: Copyright (2018) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The above article appeared in (Kan-Hao Xue, Yun Li, Hai-Lei Su, Jun-Hui Yuan, Yi Li, Zhuo-Rui Wang, Biao Zhang, and Xiang-Shui Miao, Journal of Applied Physics 124, 152125 (2018), DOI:10.1063/1.5042165) and may be found at https://aip.scitation.org/doi/10.1063/1.5042165.

	50. (2018l) Jun-Hui Yuan, Qi Chen, Leonardo R C Fonseca, Ming Xu, Kan-Hao Xue*, and Xiang-Shui Miao, GGA-1/2 self-energy correction for accurate band structure calculations: the case of resistive switching oxides, Journal of Physics Communications 2, 105005 (2018). Available operations: Cited by: On Google: Copyright (2018) the authors, published by Institute of Physics, UK. This article is an OPEN ACCESS article and may be found at http://iopscience.iop.org/article/10.1088/2399-6528/aade7e.

	49. (2018k) Zhuo-Rui Wang, Yi Li, Yu-Ting Su, Ya-Xiong Zhou, Long Cheng, Ting-Chang Chang, Kan-Hao Xue*, Simon M. Sze, and Xiang-Shui Miao, Efficient implementation of Boolean and full-adder functions with 1T1R RRAMs for beyond von Neumann in-memory computing, IEEE Transactions on Electron Devices 65, 4659 (2018). Impact Factor: 3.221 Available operations: Cited by: On Google:

	48. (2018j) Kan-Hao Xue, Jun-Hui Yuan, Leonardo R.C. Fonseca, and Xiang-Shui Miao, Improved LDA-1/2 method for band structure calculations in covalent semiconductors, Computational Materials Science 153*, 493 (2018). Impact Factor: 3.572 Available operations: Cited by: On Google:

	47. (2018i) Kan-Hao Xue, Hai-Lei Su, Yi Li, Hua-Jun Sun, Wei-Fan He, Ting-Chang Chang, Lin Chen, David Wei Zhang, and Xiang-Shui Miao, Model of dielectric breakdown in hafnia-based ferroelectric capacitors, Journal of Applied Physics 124*, 024103 (2018). Impact Factor: 2.877 Available operations: Cited by: On Google:

	46. (2018h) Ya-Xiong Zhou, Yi Li, Nian Duan, Zhuo-Rui Wang, Ke Lu, Miao-Miao Jin, Long Cheng, Si-Yu Hu, Ting-Chang Chang, Hua-Jun Sun, Kan-Hao Xue, and Xiang-Shui Miao, Boolean and Sequential Logic in a One-Memristor-One-Resistor (1M1R) Structure for In-Memory Computing, Advanced Electronic Materials 4, 1800229 (2018). Impact Factor: 7.633 Available operations: Cited by: On Google:

	45. (2018g) Ke Lu, Yi Li, Wei-Fan He, Jia Chen, Ya-Xiong Zhou, Nian Duan, Miao-Miao Jin, Wei Gu, Kan-Hao Xue, Hua-Jun Sun, and Xiang-Shui Miao, Diverse spike-timing-dependent plasticity based on multilevel HfOx memristor for neuromorphic computing, Applied Physics A 124*, 438 (2018). Available operations: Cited by: On Google:

	44. (2018f) Hao-Xuan Zheng, Ting-Chang Chang, Kan-Hao Xue, Yu-Ting Su, Cheng-Hsien Wu, Chih-Cheng Shih, Yi-Ting Tseng, Wen-Chung Chen, Wei-Chen Huang, Chun-Kuei Chen, Xiang-Shui Miao, and Simon M. Sze, Reducing Forming Voltage by Applying Bipolar Incremental Step Pulse Programming in a 1T1R Structure Resistance Random Access Memory, IEEE Electron Device Letters 39, 815 (2018). Impact Factor: 4.816 Available operations: Cited by: On Google:

	43. (2018e) Ming Xu, Zhenyu Lei, Junhui Yuan, Kanhao Xue, Yanrong Guo, Songyou Wang, Xiangshui Miao, and Riccardo Mazzarello, Structural disorder in the high-temperature cubic phase of GeTe, RSC Advances 8, 17435 (2018). Impact Factor: 4.036 Available operations: Cited by: On Google:

	42. (2018d) Lin Lv, Zhishan Li, Kan-Hao Xue, Yunjun Ruan, Xiang Ao, Houzhao Wan, Xiangshui Miao, Baoshun Zhang, Jianjun Jiang, Chundong Wang, and Kostya Ostrikov, Tailoring the electrocatalytic activity of bimetallic nickel-iron diselenide hollow nanochains for water oxidation, Nano Energy 47, 275 (2018). Impact Factor: 19.069 Available operations: Cited by: On Google:

	41. (2018c) N. Liu, P. Yan, Y. Li, K. Lu, H. J. Sun, H. K. Ji, K. H. Xue, and X. S. Miao, Conducting mechanism of Ag-diffused Bi–Te based resistive switching devices, Applied Physics A 124*, 143 (2018). Available operations: Cited by: On Google:

	40. (2018b) Junhui Yuan, Niannian Yu, Jiafu Wang, Kan-Hao Xue, and Xiangshui Miao, Design lateral heterostructure of monolayer ZrS₂ and HfS₂ from first principles calculations, Applied Surface Science 436*, 919 (2018). Impact Factor: 7.392 Available operations: Cited by: On Google:

	39. (2018a) Kan-Hao Xue* and Xiang-Shui Miao, Oxygen vacancy chain and conductive filament formation in hafnia, Journal of Applied Physics 123*, 161505 (2018). Impact Factor: 2.877 Available operations: Cited by: On Google: Copyright (2018) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The above article appeared in (Kan-Hao Xue and Xiang-Shui Miao, Journal of Applied Physics 123, 161505 (2018), DOI: 10.1063/1.4989621) and may be found at http://aip.scitation.org/doi/10.1063/1.4989621.

	38. (2017f) Ze-Han Wu, Kan-Hao Xue*, and Xiang-Shui Miao, Filament-to-dielectric band alignments in TiO₂ and HfO₂ resistive RAMs, Journal of Computational Electronics 16, 1057 (2017). Impact Factor: 1.983 Available operations: Cited by: On Google:

	37. (2017e) Yi Li, Kang-Sheng Yin, Mei-Yun Zhang, Long Cheng, Ke Lu, Shi-Bing Long, Yaxiong Zhou, Zhuorui Wang, Kan-Hao Xue, Ming Liu, and Xiang-Shui Miao, Correlation analysis between the current fluctuation characteristics and the conductive filament morphology of HfO₂-based memristor, Applied Physics Letters 111*, 213505 (2017). Impact Factor: 3.971 Available operations: Cited by: On Google:

	36. (2017d) Weifan He, Huajun Sun, Yaxiong Zhou, Ke Lu, Kanhao Xue*, and Xiangshui Miao, Customized binary and multi-level HfO_2-x-based memristors tuned by oxidation conditions, Scientific Reports 7, 10070 (2017). Impact Factor: 4.996 Available operations: Cited by: On Google:

	35. (2017c) Kan-Hao Xue, Leonardo R. C. Fonseca, and Xiang-Shui Miao*, Ferroelectric fatigue in layered perovskites from self-energy corrected density functional theory, RSC Advances 7, 21856 (2017). Impact Factor: 4.036 Available operations: Cited by: On Google: Copyright (2017) the authors, published by the Royal Society of Chemistry. This article is an OPEN ACCESS article and may be found at http://pubs.rsc.org/en/content/articlelanding/2017/ra/c7ra01650f.

	34. (2017b) Junhui Yuan, Niannian Yu, Kanhao Xue, and Xiangshui Miao, Stability, electronic and thermodynamic properties of aluminene from first-principles calculations, Applied Surface Science 409*, 85 (2017). Impact Factor: 7.392 Available operations: Cited by: On Google:

	33. (2017a) Junhui Yuan, Niannian Yu, Kanhao Xue*, and Xiangshui Miao, Ideal strength and elastic instability in single-layer 8-Pmmn borophene, RSC Advances 7, 8654 (2017). Impact Factor: 4.036 Available operations: Cited by: On Google:

	32. (2016g) Yi Li, Yaxiong Zhou, Lei Xu, Ke Lu, Zhuo-Rui Wang, Nian Duan, Lei Jiang, Long Cheng, Ting-Chang Chang, Kuan-Chang Chang, Hua-Jun Sun, Kan-Hao Xue, and Xiangshui Miao*, Realization of Functional Complete Stateful Boolean Logic in Memristive Crossbar, ACS Applied Materials & Interfaces 8, 34559 (2016). Impact Factor: 10.383 Available operations: Cited by: On Google:

	31. (2016f) Xue-Bing Yin, Rui Yang, Kan-Hao Xue, Zhenghua Tan, Xiao-Dong Zhang, Xiangshui Miao, and Xin Guo, Mimicking the brain functions of learning, forgetting and explicit/implicit memories with SrTiO3-based memristive devices, Physical Chemistry Chemical Physics 18, 31796 (2016). Impact Factor: 3.945 Available operations: Cited by: On Google:

	30. (2016e) H. Qian, H. Tong, L. J. Zhou, B. H. Yan, H. K. Ji, K. H. Xue*, X. M. Cheng, and X. S. Miao, Low work function of crystalline GeTe/Sb₂Te₃ superlattice-like films induced by the Te dangling bonds, Journal of Physics D 49, 495302 (2016). Impact Factor: 3.409 Available operations: Cited by: On Google:

	29. (2016d) Vigneshwaran Thangavel, Kan-Hao Xue, Youcef Mammeri, Matias Quiroga, Afef Mastouri, Claude Guéry, Patrik Johansson, Mathieu Morcrette, and Alejandro A. Franco, A Microstructurally Resolved Model for Li-S Batteries Assessing the Impact of the Cathode Design on the Discharge Performance, Journal of The Electrochemical Society 163*, A2817 (2016). Impact Factor: 4.386 Available operations: Cited by: On Google: Copyright (2016) the authors, published by The Electrochemical Society. This article is an OPEN ACCESS article and may be found at http://jes.ecsdl.org/content/163/13/A2817.

	28. (2016c) L. Jiang, L. Xu, J. W. Chen, P. Yan, K. H. Xue, H. J. Sun, and X. S. Miao, Conductance quantization in an AgInSbTe-based memristor at nanosecond scale, Applied Physics Letters 109*, 153506 (2016). Impact Factor: 3.971 Available operations: Cited by: On Google:

	27. (2016b) X. W. Guan, X. M. Cheng, S. Wang, T. Huang, K. H. Xue*, and X. S. Miao, Effect of MgO/Fe Interface Oxidation State on Electric-Field Modulation of Interfacial Magnetic Anisotropy, Journal of Electronic Materials 45, 3162 (2016). Impact Factor: 2.047 Available operations: Cited by: On Google:

	26. (2016a) X. W. Guan, X. M. Cheng, T. Huang, S. Wang, K. H. Xue, and X. S. Miao, Effect of metal-to-metal interface states on the electric-field modified magnetic anisotropy in MgO/Fe/non-magnetic metal, Journal of Applied Physics 119*, 133905 (2016). Impact Factor: 2.877 Available operations: Cited by: On Google:

	25. (2015b) Jin Zhang, Artem R. Oganov, Xinfeng Li, Kan-Hao Xue, Zhenhai Wang, and Huafeng Dong, Pressure-induced novel compounds in the Hf-O system from first-principles calculations, Physical Review B 92, 184104 (2015). Impact Factor: 3.908 Available operations: Cited by: On Google:

	24. (2015a) Kan-Hao Xue, Euan McTurk, Lee Johnson, Peter G. Bruce, and Alejandro A. Franco, A comprehensive model for non-aqueous lithium air batteries involving different reaction mechanisms, Journal of The Electrochemical Society 162*, A614 (2015). Impact Factor: 4.386 Available operations: Cited by: On Google: Copyright (2015) the authors, published by The Electrochemical Society. This article is an OPEN ACCESS article and may be found at http://jes.ecsdl.org/content/162/4/A614.

	23. (2014e) E. Vianello, P. Blaise, B. Traoré, K.-H. Xue*, L. R. C. Fonseca, G. Molas, B. de Salvo, L. Perniola, and Y. Nishi, Investigation of Frenkel-pair formation in HfO₂ and its influence on OxRAM memory reliability, ECS Transactions 64, 141 (2014). Available operations: Cited by: On Google:

	22. (2014d) Kan-Hao Xue*, Leonardo R. C. Fonseca, and Yoshio Nishi, First-principles study of A-site substitution in ferroelectric bismuth titanate, Journal of Materials Science 49, 6363 (2014). Impact Factor: 4.682 Available operations: Cited by: On Google:

	21. (2014c) Matias A. Quiroga, Kan-Hao Xue, Trong-Khoa Nguyen, Michał Tułodziecki, He Huang, and Alejandro A. Franco, A multiscale model of electrochemical double layers in energy conversion and storage devices, Journal of The Electrochemical Society 161*, E3302 (2014). Impact Factor: 4.386 Available operations: Cited by: On Google:

	20. (2014b) Kan-Hao Xue, Boubacar Traoré, Philippe Blaise, Leonardo R. C. Fonseca, Elisa Vianello, Gabriel Molas, Barbara De Salvo, Gérard Ghibaudo, Blanka Magyari-Köpe, and Yoshio Nishi, A combined ab initio* and experimental study on the nature of conductive filaments in Pt/HfO₂/Pt resistive random access memory, IEEE Transactions on Electron Devices 61, 1394 (2014). Impact Factor: 3.221 Available operations: Cited by: On Google:

	19. (2014a) Kan-Hao Xue, Trong-Khoa Nguyen, and Alejandro A. Franco, Impact of the cathode microstructure on the discharge performance of lithium air batteries: A multiscale model, Journal of The Electrochemical Society 161*, E3028 (2014). Impact Factor: 4.386 Available operations: Cited by: On Google: Copyright (2014) The Electrochemical Society. This article may be downloaded for personal use only. The above article may be found at http://jes.ecsdl.org/content/161/8/E3028.

	18. (2013d) Alejandro A. Franco* and Kan-Hao Xue*, Carbon-based electrodes for lithium air batteries: scientific and technological challenges from a modeling perspective, ECS Journal of Solid State Science and Technology 2, M3084 (2013). Impact Factor: 2.483 Available operations: Cited by: On Google: Copyright (2013) The Electrochemical Society. This article may be downloaded for personal use only. The above article may be found at http://jss.ecsdl.org/content/2/10/M3084.abstract.

	17. (2013c) K.-H. Xue, P. Blaise, L. R. C. Fonseca, G. Molas, E. Vianello, B. Traoré, B. De Salvo, G. Ghibaudo, and Y. Nishi, Grain boundary composition and conduction in HfO₂: An ab initio* study, Applied Physics Letters 102, 201908 (2013). Impact Factor: 3.971 Available operations: Cited by: On Google: Copyright (2013) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The above article appeared in (K.-H. Xue, P. Blaise, L. R. C. Fonseca, G. Molas, E. Vianello, B. Traoré, B. De Salvo, G. Ghibaudo, and Y. Nishi, Applied Physics Letters 102, 201908 (2013), DOI:10.1063/1.4807666) and may be found at http://apl.aip.org/resource/1/applab/v102/i20/p201908_s1.

	16. (2013b) Kan-Hao Xue, Philippe Blaise, Leonardo R. C. Fonseca, and Yoshio Nishi, Prediction of semimetallic tetragonal Hf₂O₃ and Zr₂O₃ from first principles, Physical Review Letters 110*, 065502 (2013). Impact Factor: 9.185 Available operations: Cited by: On Google: Copyright (2013) American Physical Society. This article may be downloaded for personal use only. The above article may be found at http://prl.aps.org/abstract/PRL/v110/i6/e065502.

	15. (2013a) Kan-Hao Xue* and Gregory L. Plett*, A convective transport theory for high rate discharge in lithium ion cells, Electrochimica Acta 87, 575 (2013). Impact Factor: 7.336 Available operations: Cited by: On Google:

	14. (2011f) Jolanta Celinska, Christopher McWilliams, Carlos Paz de Araujo, and Kan-Hao Xue, Operating current reduction in nickel oxide correlated electron random access memories (CeRAMs) through controlled fabrication processes, Integrated Ferroelectrics 124*, 105 (2011). Impact Factor: 0.836 Available operations: Cited by: On Google:

	13. (2011e) Christopher R. McWilliams, Jolanta Celinska, Carlos A. Paz de Araujo, and Kan-Hao Xue, Re-programmable antifuse FPGA utilizing resistive CeRAM elements, Integrated Ferroelectrics 124*, 97 (2011). Impact Factor: 0.836 Available operations: Cited by: On Google:

	12. (2011d) Kan-Hao Xue, Carlos A. Paz de Araujo, Jolanta Celinska, and Christopher McWilliams, Investigation on divalent metal substituted bismuth titanate ferroelectric thin films, Integrated Ferroelectrics 124*, 26 (2011). Impact Factor: 0.836 Available operations: Cited by: On Google:

	11. (2011c) Christopher R. McWilliams, Jolanta Celinska, Carlos A. Paz de Araujo, and Kan-Hao Xue, Device characterization of correlated electron random access memories, Journal of Applied Physics 109*, 091608 (2011). Impact Factor: 2.877 Available operations: Cited by: On Google:

	10. (2011b) Jolanta Celinska, Christopher McWilliams, Carlos Paz de Araujo, and Kan-Hao Xue, Material and process optimization of correlated electron random access memories (CeRAMs), Journal of Applied Physics 109*, 091603 (2011). Impact Factor: 2.877 Available operations: Cited by: On Google:

	9. (2011a) Kan-Hao Xue, Carlos A. Paz de Araujo, Jolanta Celinska, and Christopher McWilliams, A non-filamentary model for unipolar switching transition metal oxide resistance random access memories, Journal of Applied Physics 109*, 091602 (2011). Impact Factor: 2.877 Available operations: Cited by: On Google: Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The above article appeared in (Kan-Hao Xue, Carlos A. Paz de Araujo, Jolanta Celinska, and Christopher McWilliams, Journal of Applied Physics 109, 091602 (2011), DOI:10.1063/1.3581193) and may be found at http://jap.aip.org/resource/1/japiau/v109/i9/p091602_s1.

	8. (2010) Kan-Hao Xue, Carlos A. Paz de Araujo, and Jolanta Celinska, A comparative study on Bi₄Ti₃O₁₂ and Bi_3.25La_0.75Ti₃O₁₂ ferroelectric thin films derived by metal organic decomposition, Journal of Applied Physics 107*, 104123 (2010). Impact Factor: 2.877 Available operations: Cited by: On Google: Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The above article appeared in (Kan-Hao Xue, Carlos A. Paz de Araujo, and Jolanta Celinska, Journal of Applied Physics 107, 104123 (2010), DOI:10.1063/1.3428968) and may be found at http://jap.aip.org/resource/1/japiau/v107/i10/p104123_s1.

	7. (2009c) Kan-Hao Xue*, Jolanta Celinska, and Carlos A. Paz de Araujo, Low temperature preparation of ferroelectric bismuth titanate thin films, Applied Physics Letters 95, 052908 (2009). Impact Factor: 3.971 Available operations: Cited by: On Google:

	6. (2009b) TianLing Ren, MingMing Zhang, Ze Jia, LinKai Wang, ChaoGang Wei, KanHao Xue*, YingJie Zhang, Hong Hu, Dan Xie, and LiTian Liu, Model and key fabrication technologies for FeRAM, ECS Transactions 22, 217 (2009). Available operations: Cited by: On Google:

	5. (2009a) Dan Xie, Wenkao Yu, Yafeng Luo, Kanhao Xue*, Tianling Ren, and Litian Liu, Etching behavior and damage rejuvenation of top electrode and Bi_3.15Nd_0.85Ti₃O₁₂ films applied in ferroelectric random access memory devices, Japanese Journal of Applied Physics 48, 050209 (2009). Impact Factor: 1.491 Available operations: Cited by: On Google:

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