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Peer-reviewed journal papers | Conference
 
     
  28. (2016c) L. Jiang, L. Xu, J. W. Chen, P. Yan, K. H. Xue, H. J. Sun*, and X. S. Miao,

Conductance quantization in an AgInSbTe-based memristor at nanosecond scale,

Applied Physics Letters 109, 153506 (2016).


Impact Factor: 3.971

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  27. (2016b) X. W. Guan, X. M. Cheng*, S. Wang, T. Huang, K. H. Xue, and X. S. Miao,

Effect of MgO/Fe Interface Oxidation State on Electric-Field Modulation of Interfacial Magnetic Anisotropy,

Journal of Electronic Materials 45, 3162 (2016).


Impact Factor: 2.047

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  26. (2016a) X. W. Guan, X. M. Cheng*, T. Huang, S. Wang, K. H. Xue, and X. S. Miao,

Effect of metal-to-metal interface states on the electric-field modified magnetic anisotropy in MgO/Fe/non-magnetic metal,

Journal of Applied Physics 119, 133905 (2016).


Impact Factor: 2.877

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  25. (2015b) Jin Zhang*, Artem R. Oganov*, Xinfeng Li, Kan-Hao Xue, Zhenhai Wang, and Huafeng Dong,

Pressure-induced novel compounds in the Hf-O system from first-principles calculations,

Physical Review B 92, 184104 (2015).


Impact Factor: 3.908

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  24. (2015a) Kan-Hao Xue, Euan McTurk, Lee Johnson, Peter G. Bruce, and Alejandro A. Franco*,

A comprehensive model for non-aqueous lithium air batteries involving different reaction mechanisms,

Journal of The Electrochemical Society 162, A614 (2015).


Impact Factor: 4.386

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Copyright (2015) the authors, published by The Electrochemical Society. This article is an OPEN ACCESS article and may be found at http://jes.ecsdl.org/content/162/4/A614.
 
     
  23. (2014e) E. Vianello*, P. Blaise, B. Traor¨¦, K.-H. Xue, L. R. C. Fonseca, G. Molas, B. de Salvo, L. Perniola, and Y. Nishi,

Investigation of Frenkel-pair formation in HfO2 and its influence on OxRAM memory reliability,

ECS Transactions 64, 141 (2014).


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  22. (2014d) Kan-Hao Xue*, Leonardo R. C. Fonseca, and Yoshio Nishi,

First-principles study of A-site substitution in ferroelectric bismuth titanate,

Journal of Materials Science 49, 6363 (2014).


Impact Factor: 4.682

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  21. (2014c) Matias A. Quiroga, Kan-Hao Xue, Trong-Khoa Nguyen, Michał Tułodziecki, He Huang, and Alejandro A. Franco*,

A multiscale model of electrochemical double layers in energy conversion and storage devices,

Journal of The Electrochemical Society 161, E3302 (2014).


Impact Factor: 4.386

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  20. (2014b) Kan-Hao Xue*, Boubacar Traor¨¦, Philippe Blaise, Leonardo R. C. Fonseca, Elisa Vianello, Gabriel Molas, Barbara De Salvo, G¨¦rard Ghibaudo, Blanka Magyari-Köpe, and Yoshio Nishi,

A combined ab initio and experimental study on the nature of conductive filaments in Pt/HfO2/Pt resistive random access memory,

IEEE Transactions on Electron Devices 61, 1394 (2014).


Impact Factor: 3.221

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  19. (2014a) Kan-Hao Xue, Trong-Khoa Nguyen, and Alejandro A. Franco*,

Impact of the cathode microstructure on the discharge performance of lithium air batteries: A multiscale model,

Journal of The Electrochemical Society 161, E3028 (2014).


Impact Factor: 4.386

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Copyright (2014) The Electrochemical Society. This article may be downloaded for personal use only. The above article may be found at http://jes.ecsdl.org/content/161/8/E3028.
 
     
  18. (2013d) Alejandro A. Franco* and Kan-Hao Xue*,

Carbon-based electrodes for lithium air batteries: scientific and technological challenges from a modeling perspective,

ECS Journal of Solid State Science and Technology 2, M3084 (2013).


Impact Factor: 2.483

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Copyright (2013) The Electrochemical Society. This article may be downloaded for personal use only. The above article may be found at http://jss.ecsdl.org/content/2/10/M3084.abstract.
 
     
  17. (2013c) K.-H. Xue*, P. Blaise, L. R. C. Fonseca, G. Molas, E. Vianello, B. Traor¨¦, B. De Salvo, G. Ghibaudo, and Y. Nishi,

Grain boundary composition and conduction in HfO2: An ab initio study,

Applied Physics Letters 102, 201908 (2013).


Impact Factor: 3.971

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Copyright (2013) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The above article appeared in (K.-H. Xue, P. Blaise, L. R. C. Fonseca, G. Molas, E. Vianello, B. Traor¨¦, B. De Salvo, G. Ghibaudo, and Y. Nishi, Applied Physics Letters 102, 201908 (2013), DOI:10.1063/1.4807666) and may be found at http://apl.aip.org/resource/1/applab/v102/i20/p201908_s1.
 
     
  16. (2013b) Kan-Hao Xue*, Philippe Blaise, Leonardo R. C. Fonseca, and Yoshio Nishi,

Prediction of semimetallic tetragonal Hf2O3 and Zr2O3 from first principles,

Physical Review Letters 110, 065502 (2013).


Impact Factor: 9.185

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Copyright (2013) American Physical Society. This article may be downloaded for personal use only. The above article may be found at http://prl.aps.org/abstract/PRL/v110/i6/e065502.
 
     
  15. (2013a) Kan-Hao Xue* and Gregory L. Plett*,

A convective transport theory for high rate discharge in lithium ion cells,

Electrochimica Acta 87, 575 (2013).


Impact Factor: 7.336

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  14. (2011f) Jolanta Celinska*, Christopher McWilliams, Carlos Paz de Araujo, and Kan-Hao Xue,

Operating current reduction in nickel oxide correlated electron random access memories (CeRAMs) through controlled fabrication processes,

Integrated Ferroelectrics 124, 105 (2011).


Impact Factor: 0.836

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  13. (2011e) Christopher R. McWilliams*, Jolanta Celinska, Carlos A. Paz de Araujo, and Kan-Hao Xue,

Re-programmable antifuse FPGA utilizing resistive CeRAM elements,

Integrated Ferroelectrics 124, 97 (2011).


Impact Factor: 0.836

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  12. (2011d) Kan-Hao Xue*, Carlos A. Paz de Araujo, Jolanta Celinska, and Christopher McWilliams,

Investigation on divalent metal substituted bismuth titanate ferroelectric thin films,

Integrated Ferroelectrics 124, 26 (2011).


Impact Factor: 0.836

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  11. (2011c) Christopher R. McWilliams*, Jolanta Celinska, Carlos A. Paz de Araujo, and Kan-Hao Xue,

Device characterization of correlated electron random access memories,

Journal of Applied Physics 109, 091608 (2011).


Impact Factor: 2.877

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  10. (2011b) Jolanta Celinska*, Christopher McWilliams, Carlos Paz de Araujo, and Kan-Hao Xue,

Material and process optimization of correlated electron random access memories (CeRAMs),

Journal of Applied Physics 109, 091603 (2011).


Impact Factor: 2.877

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  9. (2011a) Kan-Hao Xue*, Carlos A. Paz de Araujo, Jolanta Celinska, and Christopher McWilliams,

A non-filamentary model for unipolar switching transition metal oxide resistance random access memories,

Journal of Applied Physics 109, 091602 (2011).


Impact Factor: 2.877

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Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The above article appeared in (Kan-Hao Xue, Carlos A. Paz de Araujo, Jolanta Celinska, and Christopher McWilliams, Journal of Applied Physics 109, 091602 (2011), DOI:10.1063/1.3581193) and may be found at http://jap.aip.org/resource/1/japiau/v109/i9/p091602_s1.
 
     
  8. (2010) Kan-Hao Xue*, Carlos A. Paz de Araujo, and Jolanta Celinska,

A comparative study on Bi4Ti3O12 and Bi3.25La0.75Ti3O12 ferroelectric thin films derived by metal organic decomposition,

Journal of Applied Physics 107, 104123 (2010).


Impact Factor: 2.877

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Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The above article appeared in (Kan-Hao Xue, Carlos A. Paz de Araujo, and Jolanta Celinska, Journal of Applied Physics 107, 104123 (2010), DOI:10.1063/1.3428968) and may be found at http://jap.aip.org/resource/1/japiau/v107/i10/p104123_s1.
 
     
  7. (2009c) Kan-Hao Xue*, Jolanta Celinska, and Carlos A. Paz de Araujo,

Low temperature preparation of ferroelectric bismuth titanate thin films,

Applied Physics Letters 95, 052908 (2009).


Impact Factor: 3.971

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  6. (2009b) TianLing Ren*, MingMing Zhang, Ze Jia, LinKai Wang, ChaoGang Wei, KanHao Xue, YingJie Zhang, Hong Hu, Dan Xie, and LiTian Liu,

Model and key fabrication technologies for FeRAM,

ECS Transactions 22, 217 (2009).


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  5. (2009a) Dan Xie*, Wenkao Yu, Yafeng Luo, Kanhao Xue, Tianling Ren, and Litian Liu,

Etching behavior and damage rejuvenation of top electrode and Bi3.15Nd0.85Ti3O12 films applied in ferroelectric random access memory devices,

Japanese Journal of Applied Physics 48, 050209 (2009).


Impact Factor: 1.491

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  4. (2008b) Xin-Yi Wen*, Jun Yu, Tian-Ling Ren, Kan-Hao Xue, Wen-Li Zhou, and Yun-Bo Wang,

Studies on the fatigue behavior of ferroelectric film using Preisach approach,

Integrated Ferroelectrics 99, 3 (2008).


Impact Factor: 0.836

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  3. (2008a) Kan-Hao Xue, Tian-Ling Ren*, Dan Xie, Ze Jia, Ming-Ming Zhang, and Li-Tian Liu,

Nitrogen-rich titanium nitride serving as Pt-Al diffusion barrier for FeRAM application,

Integrated Ferroelectrics 96, 19 (2008).


Impact Factor: 0.836

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  2. (2007) Kan-Hao Xue, Tian-Ling Ren*, Tian-Zhi Liu, Dan Xie, Ze Jia, and Li-Tian Liu,

Investigation on annealing and etching effects for Pt/Bi3.15Nd0.85Ti3O12/Pt ferroelectric capacitors,

Japanese Journal of Applied Physics 46, 4200 (2007).


Impact Factor: 1.491

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  1. (2006) Kan-Hao Xue*, Zhi-Gang Zhang, Dan Xie, Chao-Gang Wei, Tian-Zhi Liu, Tian-Ling Ren, and Li-Tian Liu,

Studies on the relax behavior of SrBi2Ta2O9 thin films,

Integrated Ferroelectrics 79, 81 (2006).


Impact Factor: 0.836

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