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Get formatted list Pages: [1][2][3][4] |
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Peer-reviewed journal papers | Conference * Shell DFT-1/2 | Ferroelectrics |
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51. (2018m) Kan-Hao Xue, Yun Li, Hai-Lei Su, Jun-Hui Yuan, Yi Li, Zhuo-Rui Wang, Biao Zhang, and Xiang-Shui Miao*,
Theoretical investigation of the Ag filament morphology in conductive bridge random access memories,
Journal of Applied Physics 124, 152125 (2018).
Impact Factor: 2.877
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Copyright (2018) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The above article appeared in (Kan-Hao Xue, Yun Li, Hai-Lei Su, Jun-Hui Yuan, Yi Li, Zhuo-Rui Wang, Biao Zhang, and Xiang-Shui Miao, Journal of Applied Physics 124, 152125 (2018), DOI:10.1063/1.5042165) and may be found at https://aip.scitation.org/doi/10.1063/1.5042165.
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50. (2018l) Jun-Hui Yuan, Qi Chen, Leonardo R C Fonseca, Ming Xu, Kan-Hao Xue*, and Xiang-Shui Miao,
GGA-1/2 self-energy correction for accurate band structure calculations: the case of resistive switching oxides,
Journal of Physics Communications 2, 105005 (2018).
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Copyright (2018) the authors, published by Institute of Physics, UK. This article is an OPEN ACCESS article and may be found at http://iopscience.iop.org/article/10.1088/2399-6528/aade7e.
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49. (2018k) Zhuo-Rui Wang, Yi Li*, Yu-Ting Su, Ya-Xiong Zhou, Long Cheng, Ting-Chang Chang, Kan-Hao Xue, Simon M. Sze, and Xiang-Shui Miao,
Efficient implementation of Boolean and full-adder functions with 1T1R RRAMs for beyond von Neumann in-memory computing,
IEEE Transactions on Electron Devices 65, 4659 (2018).
Impact Factor: 3.221
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48. (2018j) Kan-Hao Xue*, Jun-Hui Yuan, Leonardo R.C. Fonseca, and Xiang-Shui Miao,
Improved LDA-1/2 method for band structure calculations in covalent semiconductors,
Computational Materials Science 153, 493 (2018).
Impact Factor: 3.572
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47. (2018i) Kan-Hao Xue, Hai-Lei Su, Yi Li, Hua-Jun Sun, Wei-Fan He, Ting-Chang Chang*, Lin Chen*, David Wei Zhang, and Xiang-Shui Miao*,
Model of dielectric breakdown in hafnia-based ferroelectric capacitors,
Journal of Applied Physics 124, 024103 (2018).
Impact Factor: 2.877
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46. (2018h) Ya-Xiong Zhou, Yi Li*, Nian Duan, Zhuo-Rui Wang, Ke Lu, Miao-Miao Jin, Long Cheng, Si-Yu Hu, Ting-Chang Chang, Hua-Jun Sun, Kan-Hao Xue, and Xiang-Shui Miao*,
Boolean and Sequential Logic in a One-Memristor-One-Resistor (1M1R) Structure for In-Memory Computing,
Advanced Electronic Materials 4, 1800229 (2018).
Impact Factor: 7.633
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45. (2018g) Ke Lu, Yi Li*, Wei-Fan He, Jia Chen, Ya-Xiong Zhou, Nian Duan, Miao-Miao Jin, Wei Gu, Kan-Hao Xue, Hua-Jun Sun, and Xiang-Shui Miao,
Diverse spike-timing-dependent plasticity based on multilevel HfOx memristor for neuromorphic computing,
Applied Physics A 124, 438 (2018).
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44. (2018f) Hao-Xuan Zheng, Ting-Chang Chang*, Kan-Hao Xue*, Yu-Ting Su, Cheng-Hsien Wu, Chih-Cheng Shih, Yi-Ting Tseng, Wen-Chung Chen, Wei-Chen Huang, Chun-Kuei Chen, Xiang-Shui Miao, and Simon M. Sze,
Reducing Forming Voltage by Applying Bipolar Incremental Step Pulse Programming in a 1T1R Structure Resistance Random Access Memory,
IEEE Electron Device Letters 39, 815 (2018).
Impact Factor: 4.816
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43. (2018e) Ming Xu, Zhenyu Lei, Junhui Yuan, Kanhao Xue*, Yanrong Guo, Songyou Wang*, Xiangshui Miao, and Riccardo Mazzarello,
Structural disorder in the high-temperature cubic phase of GeTe,
RSC Advances 8, 17435 (2018).
Impact Factor: 4.036
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42. (2018d) Lin Lv, Zhishan Li, Kan-Hao Xue*, Yunjun Ruan, Xiang Ao, Houzhao Wan, Xiangshui Miao, Baoshun Zhang, Jianjun Jiang, Chundong Wang*, and Kostya Ostrikov,
Tailoring the electrocatalytic activity of bimetallic nickel-iron diselenide hollow nanochains for water oxidation,
Nano Energy 47, 275 (2018).
Impact Factor: 19.069
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41. (2018c) N. Liu, P. Yan, Y. Li, K. Lu, H. J. Sun*, H. K. Ji, K. H. Xue, and X. S. Miao,
Conducting mechanism of Ag-diffused Bi¨CTe based resistive switching devices,
Applied Physics A 124, 143 (2018).
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40. (2018b) Junhui Yuan, Niannian Yu, Jiafu Wang, Kan-Hao Xue*, and Xiangshui Miao,
Design lateral heterostructure of monolayer ZrS2 and HfS2 from first principles calculations,
Applied Surface Science 436, 919 (2018).
Impact Factor: 7.392
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39. (2018a) Kan-Hao Xue* and Xiang-Shui Miao*,
Oxygen vacancy chain and conductive filament formation in hafnia,
Journal of Applied Physics 123, 161505 (2018).
Impact Factor: 2.877
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Copyright (2018) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The above article appeared in (Kan-Hao Xue and Xiang-Shui Miao, Journal of Applied Physics 123, 161505 (2018), DOI: 10.1063/1.4989621) and may be found at http://aip.scitation.org/doi/10.1063/1.4989621.
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38. (2017f) Ze-Han Wu, Kan-Hao Xue*, and Xiang-Shui Miao,
Filament-to-dielectric band alignments in TiO2 and HfO2 resistive RAMs,
Journal of Computational Electronics 16, 1057 (2017).
Impact Factor: 1.983
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37. (2017e) Yi Li*, Kang-Sheng Yin, Mei-Yun Zhang, Long Cheng, Ke Lu, Shi-Bing Long*, Yaxiong Zhou, Zhuorui Wang, Kan-Hao Xue, Ming Liu, and Xiang-Shui Miao*,
Correlation analysis between the current fluctuation characteristics and the conductive filament morphology of HfO2-based memristor,
Applied Physics Letters 111, 213505 (2017).
Impact Factor: 3.971
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36. (2017d) Weifan He, Huajun Sun*, Yaxiong Zhou, Ke Lu, Kanhao Xue, and Xiangshui Miao,
Customized binary and multi-level HfO2-x-based memristors tuned by oxidation conditions,
Scientific Reports 7, 10070 (2017).
Impact Factor: 4.996
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35. (2017c) Kan-Hao Xue, Leonardo R. C. Fonseca, and Xiang-Shui Miao*,
Ferroelectric fatigue in layered perovskites from self-energy corrected density functional theory,
RSC Advances 7, 21856 (2017).
Impact Factor: 4.036
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Copyright (2017) the authors, published by the Royal Society of Chemistry. This article is an OPEN ACCESS article and may be found at http://pubs.rsc.org/en/content/articlelanding/2017/ra/c7ra01650f.
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34. (2017b) Junhui Yuan, Niannian Yu, Kanhao Xue*, and Xiangshui Miao,
Stability, electronic and thermodynamic properties of aluminene from first-principles calculations,
Applied Surface Science 409, 85 (2017).
Impact Factor: 7.392
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33. (2017a) Junhui Yuan, Niannian Yu, Kanhao Xue*, and Xiangshui Miao,
Ideal strength and elastic instability in single-layer 8-Pmmn borophene,
RSC Advances 7, 8654 (2017).
Impact Factor: 4.036
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32. (2016g) Yi Li, Yaxiong Zhou, Lei Xu, Ke Lu, Zhuo-Rui Wang, Nian Duan, Lei Jiang, Long Cheng, Ting-Chang Chang, Kuan-Chang Chang, Hua-Jun Sun, Kan-Hao Xue, and Xiangshui Miao*,
Realization of Functional Complete Stateful Boolean Logic in Memristive Crossbar,
ACS Applied Materials & Interfaces 8, 34559 (2016).
Impact Factor: 10.383
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31. (2016f) Xue-Bing Yin, Rui Yang*, Kan-Hao Xue, Zhenghua Tan, Xiao-Dong Zhang, Xiangshui Miao, and Xin Guo*,
Mimicking the brain functions of learning, forgetting and explicit/implicit memories with SrTiO3-based memristive devices,
Physical Chemistry Chemical Physics 18, 31796 (2016).
Impact Factor: 3.945
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30. (2016e) H. Qian, H. Tong*, L. J. Zhou, B. H. Yan, H. K. Ji, K. H. Xue, X. M. Cheng, and X. S. Miao,
Low work function of crystalline GeTe/Sb2Te3 superlattice-like films induced by the Te dangling bonds,
Journal of Physics D 49, 495302 (2016).
Impact Factor: 3.409
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29. (2016d) Vigneshwaran Thangavel, Kan-Hao Xue, Youcef Mammeri, Matias Quiroga, Afef Mastouri, Claude Gu¨¦ry, Patrik Johansson, Mathieu Morcrette, and Alejandro A. Franco*,
A Microstructurally Resolved Model for Li-S Batteries Assessing the Impact of the Cathode Design on the Discharge Performance,
Journal of The Electrochemical Society 163, A2817 (2016).
Impact Factor: 4.386
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Copyright (2016) the authors, published by The Electrochemical Society. This article is an OPEN ACCESS article and may be found at http://jes.ecsdl.org/content/163/13/A2817.
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28. (2016c) L. Jiang, L. Xu, J. W. Chen, P. Yan, K. H. Xue, H. J. Sun*, and X. S. Miao,
Conductance quantization in an AgInSbTe-based memristor at nanosecond scale,
Applied Physics Letters 109, 153506 (2016).
Impact Factor: 3.971
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27. (2016b) X. W. Guan, X. M. Cheng*, S. Wang, T. Huang, K. H. Xue, and X. S. Miao,
Effect of MgO/Fe Interface Oxidation State on Electric-Field Modulation of Interfacial Magnetic Anisotropy,
Journal of Electronic Materials 45, 3162 (2016).
Impact Factor: 2.047
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26. (2016a) X. W. Guan, X. M. Cheng*, T. Huang, S. Wang, K. H. Xue, and X. S. Miao,
Effect of metal-to-metal interface states on the electric-field modified magnetic anisotropy in MgO/Fe/non-magnetic metal,
Journal of Applied Physics 119, 133905 (2016).
Impact Factor: 2.877
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25. (2015b) Jin Zhang*, Artem R. Oganov*, Xinfeng Li, Kan-Hao Xue, Zhenhai Wang, and Huafeng Dong,
Pressure-induced novel compounds in the Hf-O system from first-principles calculations,
Physical Review B 92, 184104 (2015).
Impact Factor: 3.908
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24. (2015a) Kan-Hao Xue, Euan McTurk, Lee Johnson, Peter G. Bruce, and Alejandro A. Franco*,
A comprehensive model for non-aqueous lithium air batteries involving different reaction mechanisms,
Journal of The Electrochemical Society 162, A614 (2015).
Impact Factor: 4.386
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Copyright (2015) the authors, published by The Electrochemical Society. This article is an OPEN ACCESS article and may be found at http://jes.ecsdl.org/content/162/4/A614.
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23. (2014e) E. Vianello*, P. Blaise, B. Traor¨¦, K.-H. Xue, L. R. C. Fonseca, G. Molas, B. de Salvo, L. Perniola, and Y. Nishi,
Investigation of Frenkel-pair formation in HfO2 and its influence on OxRAM memory reliability,
ECS Transactions 64, 141 (2014).
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22. (2014d) Kan-Hao Xue*, Leonardo R. C. Fonseca, and Yoshio Nishi,
First-principles study of A-site substitution in ferroelectric bismuth titanate,
Journal of Materials Science 49, 6363 (2014).
Impact Factor: 4.682
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21. (2014c) Matias A. Quiroga, Kan-Hao Xue, Trong-Khoa Nguyen, Michał Tułodziecki, He Huang, and Alejandro A. Franco*,
A multiscale model of electrochemical double layers in energy conversion and storage devices,
Journal of The Electrochemical Society 161, E3302 (2014).
Impact Factor: 4.386
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20. (2014b) Kan-Hao Xue*, Boubacar Traor¨¦, Philippe Blaise, Leonardo R. C. Fonseca, Elisa Vianello, Gabriel Molas, Barbara De Salvo, G¨¦rard Ghibaudo, Blanka Magyari-Köpe, and Yoshio Nishi,
A combined ab initio and experimental study on the nature of conductive filaments in Pt/HfO2/Pt resistive random access memory,
IEEE Transactions on Electron Devices 61, 1394 (2014).
Impact Factor: 3.221
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19. (2014a) Kan-Hao Xue, Trong-Khoa Nguyen, and Alejandro A. Franco*,
Impact of the cathode microstructure on the discharge performance of lithium air batteries: A multiscale model,
Journal of The Electrochemical Society 161, E3028 (2014).
Impact Factor: 4.386
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Copyright (2014) The Electrochemical Society. This article may be downloaded for personal use only. The above article may be found at http://jes.ecsdl.org/content/161/8/E3028.
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18. (2013d) Alejandro A. Franco* and Kan-Hao Xue*,
Carbon-based electrodes for lithium air batteries: scientific and technological challenges from a modeling perspective,
ECS Journal of Solid State Science and Technology 2, M3084 (2013).
Impact Factor: 2.483
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Copyright (2013) The Electrochemical Society. This article may be downloaded for personal use only. The above article may be found at http://jss.ecsdl.org/content/2/10/M3084.abstract.
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17. (2013c) K.-H. Xue*, P. Blaise, L. R. C. Fonseca, G. Molas, E. Vianello, B. Traor¨¦, B. De Salvo, G. Ghibaudo, and Y. Nishi,
Grain boundary composition and conduction in HfO2: An ab initio study,
Applied Physics Letters 102, 201908 (2013).
Impact Factor: 3.971
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Copyright (2013) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The above article appeared in (K.-H. Xue, P. Blaise, L. R. C. Fonseca, G. Molas, E. Vianello, B. Traor¨¦, B. De Salvo, G. Ghibaudo, and Y. Nishi, Applied Physics Letters 102, 201908 (2013), DOI:10.1063/1.4807666) and may be found at http://apl.aip.org/resource/1/applab/v102/i20/p201908_s1.
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16. (2013b) Kan-Hao Xue*, Philippe Blaise, Leonardo R. C. Fonseca, and Yoshio Nishi,
Prediction of semimetallic tetragonal Hf2O3 and Zr2O3 from first principles,
Physical Review Letters 110, 065502 (2013).
Impact Factor: 9.185
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Copyright (2013) American Physical Society. This article may be downloaded for personal use only. The above article may be found at http://prl.aps.org/abstract/PRL/v110/i6/e065502.
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15. (2013a) Kan-Hao Xue* and Gregory L. Plett*,
A convective transport theory for high rate discharge in lithium ion cells,
Electrochimica Acta 87, 575 (2013).
Impact Factor: 7.336
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14. (2011f) Jolanta Celinska*, Christopher McWilliams, Carlos Paz de Araujo, and Kan-Hao Xue,
Operating current reduction in nickel oxide correlated electron random access memories (CeRAMs) through controlled fabrication processes,
Integrated Ferroelectrics 124, 105 (2011).
Impact Factor: 0.836
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13. (2011e) Christopher R. McWilliams*, Jolanta Celinska, Carlos A. Paz de Araujo, and Kan-Hao Xue,
Re-programmable antifuse FPGA utilizing resistive CeRAM elements,
Integrated Ferroelectrics 124, 97 (2011).
Impact Factor: 0.836
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12. (2011d) Kan-Hao Xue*, Carlos A. Paz de Araujo, Jolanta Celinska, and Christopher McWilliams,
Investigation on divalent metal substituted bismuth titanate ferroelectric thin films,
Integrated Ferroelectrics 124, 26 (2011).
Impact Factor: 0.836
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11. (2011c) Christopher R. McWilliams*, Jolanta Celinska, Carlos A. Paz de Araujo, and Kan-Hao Xue,
Device characterization of correlated electron random access memories,
Journal of Applied Physics 109, 091608 (2011).
Impact Factor: 2.877
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10. (2011b) Jolanta Celinska*, Christopher McWilliams, Carlos Paz de Araujo, and Kan-Hao Xue,
Material and process optimization of correlated electron random access memories (CeRAMs),
Journal of Applied Physics 109, 091603 (2011).
Impact Factor: 2.877
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9. (2011a) Kan-Hao Xue*, Carlos A. Paz de Araujo, Jolanta Celinska, and Christopher McWilliams,
A non-filamentary model for unipolar switching transition metal oxide resistance random access memories,
Journal of Applied Physics 109, 091602 (2011).
Impact Factor: 2.877
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Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The above article appeared in (Kan-Hao Xue, Carlos A. Paz de Araujo, Jolanta Celinska, and Christopher McWilliams, Journal of Applied Physics 109, 091602 (2011), DOI:10.1063/1.3581193) and may be found at http://jap.aip.org/resource/1/japiau/v109/i9/p091602_s1.
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8. (2010) Kan-Hao Xue*, Carlos A. Paz de Araujo, and Jolanta Celinska,
A comparative study on Bi4Ti3O12 and Bi3.25La0.75Ti3O12 ferroelectric thin films derived by metal organic decomposition,
Journal of Applied Physics 107, 104123 (2010).
Impact Factor: 2.877
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Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The above article appeared in (Kan-Hao Xue, Carlos A. Paz de Araujo, and Jolanta Celinska, Journal of Applied Physics 107, 104123 (2010), DOI:10.1063/1.3428968) and may be found at http://jap.aip.org/resource/1/japiau/v107/i10/p104123_s1.
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7. (2009c) Kan-Hao Xue*, Jolanta Celinska, and Carlos A. Paz de Araujo,
Low temperature preparation of ferroelectric bismuth titanate thin films,
Applied Physics Letters 95, 052908 (2009).
Impact Factor: 3.971
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6. (2009b) TianLing Ren*, MingMing Zhang, Ze Jia, LinKai Wang, ChaoGang Wei, KanHao Xue, YingJie Zhang, Hong Hu, Dan Xie, and LiTian Liu,
Model and key fabrication technologies for FeRAM,
ECS Transactions 22, 217 (2009).
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5. (2009a) Dan Xie*, Wenkao Yu, Yafeng Luo, Kanhao Xue, Tianling Ren, and Litian Liu,
Etching behavior and damage rejuvenation of top electrode and Bi3.15Nd0.85Ti3O12 films applied in ferroelectric random access memory devices,
Japanese Journal of Applied Physics 48, 050209 (2009).
Impact Factor: 1.491
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4. (2008b) Xin-Yi Wen*, Jun Yu, Tian-Ling Ren, Kan-Hao Xue, Wen-Li Zhou, and Yun-Bo Wang,
Studies on the fatigue behavior of ferroelectric film using Preisach approach,
Integrated Ferroelectrics 99, 3 (2008).
Impact Factor: 0.836
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3. (2008a) Kan-Hao Xue, Tian-Ling Ren*, Dan Xie, Ze Jia, Ming-Ming Zhang, and Li-Tian Liu,
Nitrogen-rich titanium nitride serving as Pt-Al diffusion barrier for FeRAM application,
Integrated Ferroelectrics 96, 19 (2008).
Impact Factor: 0.836
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2. (2007) Kan-Hao Xue, Tian-Ling Ren*, Tian-Zhi Liu, Dan Xie, Ze Jia, and Li-Tian Liu,
Investigation on annealing and etching effects for Pt/Bi3.15Nd0.85Ti3O12/Pt ferroelectric capacitors,
Japanese Journal of Applied Physics 46, 4200 (2007).
Impact Factor: 1.491
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The 3/4 (th) page; 50 items per page; Total items:151; Pages: [1][2][3][4] |
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