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Peer-reviewed journal papers | Conference
 
     
  77. (2020e) Yuan Qin, Liheng Li, Xiaolong Zhao, Gary S. Tompa, Hang Dong, Guangzhong Jian, Qiming He, Pengju Tan, Xiaohu Hou, Zhongfang Zhang, Shunjie Yu, Haiding Sun*, Guangwei Xu, Xiangshui Miao, Kanhao Xue*, Shibing Long*, and Ming Liu,

Metal¨Csemiconductor¨Cmetal ε-Ga2O3 solar-blind photodetectors with a record-high responsivity rejection ratio and their gain mechanism,

ACS Photonics 7, 812 (2020).


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  76. (2020d) Xue Zhao, Guangda Niu*, Jinsong Zhu, Bo Yang, Jun-Hui Yuan, Shunran Li, Wanru Gao, Qingsong Hu, Lixiao Yin, Kan-Hao Xue, Efrat Lifshitz*, Xiangshui Miao, and Jiang Tang*,

All-Inorganic Copper Halide as a Stable and Self-Absorption-Free X-ray Scintillator,

Journal of Physical Chemistry Letters 11, 1873 (2020).


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  75. (2020c) Li-Heng Li, Jun-Hui Yuan, Kan-Hao Xue*, Meng Xu, Ming Xu, Jia-Fu Wang, and Xiang-Shui Miao,

Synergic Effect in a New Electrocatalyst Ni2SbTe2 for Oxygen Reduction Reaction,

Journal of Physical Chemistry C 124, 3671 (2020).


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  74. (2020b) Luman Zhang, Luyao Song, Hongwei Dai, Jun-Hui Yuan, Mingshan Wang, Xinyu Huang, Lei Qiao, Hui Cheng, Xia Wang, Wei Ren, Xiangshui Miao, Lei Ye*, Kan-Hao Xue*, and Jun-Bo Han*,

Substrate-modulated ferromagnetism of two-dimensional Fe3GeTe2,

Applied Physics Letters 116, 042402 (2020).


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  73. (2020a) Wen-Yu Fang, Ping-An Li, Jun-Hui Yuan*, Kan-Hao Xue, and Jia-Fu Wang,

Nb2SiTe4 and Nb2GeTe4: Unexplored 2D ternary layered tellurides with high stability, narrow band gap and high electron mobility,

Journal of Electronic Materials 49, 959 (2020).


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  72. (2019t) Jejune Park, Kan-Hao Xue, Mireille Mouis, François Triozon, and Alessandro Cresti*,

Electron transport properties of mirror twin grain boundaries in molybdenum disulfide: Impact of disorder,

Physical Review B 100, 235403 (2019).


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  71. (2019s) Nian Duan, Yi Li*, Hsiao-Cheng Chiang, Jia Chen, Wen-Qian Pan, Ya-Xiong Zhou, Yu-Chieh Chien, Yu-Hui He, Kan-Hao Xue, Gang Liu, Ting-Chang Chang*, and Xiang-Shui Miao*,

An electro-photo-sensitive synaptic transistor for edge neuromorphic visual systems,

Nanoscale 11, 17590 (2019).


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  70. (2019r) Ge-Qi Mao, Kan-Hao Xue*, Ya-Qian Song, Wei Wu, Jun-Hui Yuan, Li-Heng Li, Huajun Sun, Shibing Long, and Xiang-Shui Miao,

Oxygen migration around the filament region in HfOx memristors,

AIP Advances 9, 105007 (2019).


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Copyright (2019) the authors, published by American Institute of Physics. This article is an OPEN ACCESS article and may be found at https://aip.scitation.org/doi/10.1063/1.5122989.
 
     
  69. (2019q) Bo Yang, Lixiao Yin, Guangda Niu*, Jun-Hui Yuan, Kan-Hao Xue, Zhifang Tan, Xiang-Shui Miao, Ming Niu, Xinyuan Du, Haisheng Song, Efrat Lifshitz, and Jiang Tang*,

Lead-free halide Rb2CuBr3 as sensitive X-ray scintillator,

Advanced Materials 31, 1904711 (2019).


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  68. (2019p) Weicheng Pan, Bo Yang, Guangda Niu*, Kan-Hao Xue, Xinyuan Du, Lixiao Yin, Muyi Zhang, Haodi Wu, Xiang-Shui Miao, and Jiang Tang*,

Hot-pressed CsPbBr3 quasi-monocrystalline film for sensitive direct X-ray detection,

Advanced Materials 31, 1904405 (2019).


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  67. (2019o) Mingrui Jiang, Biao Wang, Kan-Hao Xue, Nian Liu, Huajun Sun*, Hong Lu, and Xiangshui Miao,

Self-compliance characteristics and switching degradation in TaOx-based memristors,

Applied Physics Express 12, 104003 (2019).


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  66. (2019n) Jinfeng Lin, Yang Zhou, Qiling Lu, Xiao Wu*, Cong Lin, Tengfei Lin, Kan-Hao Xue, Xiangshui Miao, Baisheng Sa*, and Zhimei Sun,

Reversible modulation of photoenergy in Sm-doped (K0.5Na0.5)NbO3 transparent ceramics via photochromic behavior,

Journal of Materials Chemistry A 7, 19374 (2019).


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  65. (2019m) Jun-Hui Yuan, Kan-Hao Xue*, Qi Chen, Leonardo R. C. Fonseca, and Xiang-Shui Miao,

Ab initio simulation of Ta2O5: A high symmetry ground state phase with application to interface calculation,

Annalen der Physik 531, 1800524 (2019).


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  64. (2019l) Yun-Lai Zhu, Jun-Hui Yuan, Ya-Qian Song, Kan-Hao Xue*, Sheng Wang, Chen Lian, Zhao-Nan Li, Ming Xu, Xiao-Min Cheng*, and Xiang-Shui Miao,

Promising photocatalysts with high carrier mobility for water splitting in monolayer Ge2P4S2 and Ge2As4S2,

International Journal of Hydrogen Energy 44, 21536 (2019).


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  63. (2019k) Jun-Hui Yuan, Kan-Hao Xue*, Jia-Fu Wang, and Xiang-Shui Miao,

Gallium Thiophosphate: An Emerging Bidirectional Auxetic Two-Dimensional Crystal with Wide Direct Band Gap,

Journal of Physical Chemistry Letters 10, 4455 (2019).


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  62. (2019j) Ping Tang, Jun-Hui Yuan, Ya-Qian Song, Ming Xu, Kan-Hao Xue*, and Xiang-Shui Miao,

BaAs3: a narrow gap 2D semiconductor with vacancy-induced semiconductor¨Cmetal transition from first principles,

Journal of Materials Science 54, 12676 (2019).


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  61. (2019i) Jinfeng Lin, Qiling Lu, Xiao Wu*, Hailing Sun, Cong Lin, Tengfei Lin, Kan-Hao Xue, Xiangshui Miao, Baisheng Sa*, and Zhimei Sun,

In situ boost and reversible modulation of dual-mode photoluminescence under an electric field in a tape-casting-based Er-doped K0.5Na0.5NbO3 laminar ceramic,

Journal of Materials Chemistry C 7, 7885 (2019).


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  60. (2019h) Zhaonan Li, Baoyi Tian, Kan-Hao Xue, Biao Wang, Ming Xu, Hong Lu, Huajun Sun*, and Xiangshui Miao,

Coexistence of digital and analog resistive switching with low operation voltage in oxygen-gradient HfOx memristors,

IEEE Electron Device Letters 40, 1068 (2019).


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  59. (2019g) Yun-Lai Zhu, Jun-Hui Yuan, Ya-Qian Song, Sheng Wang, Kan-Hao Xue*, Ming Xu, Xiao-Min Cheng*, and Xiang-Shui Miao,

Two-dimensional silicon chalcogenides with high carrier mobility for photocatalytic water splitting,

Journal of Materials Science 54, 11485 (2019).


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  58. (2019f) Bo Yang, Weicheng Pan, Haodi Wu, Guangda Niu*, Jun-Hui Yuan, Kan-Hao Xue, Lixiao Yin, Xinyuan Du, Xiang-Shui Miao, Xiaoquan Yang, Qingguo Xie, and Jiang Tang*,

Heteroepitaxial passivation of Cs2AgBiBr6 wafers with suppressed ionic migration for X-ray imaging,

Nature Communications 10, 1989 (2019).


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  57. (2019e) Qing Luo, Haili Ma, Hailei Su, Kan-Hao Xue, Rongrong Cao, Zhaomeng Gao, Jie Yu, Tiancheng Gong, Xiaoxin Xu, Jiahao Yin, Peng Yuan, Lu Tai, Danian Dong, Shibing Long, Qi Liu, Xiang-Shui Miao, Hangbing Lv*, and Ming Liu,

Composition-dependent ferroelectric properties in sputtered HfxZr1-xO2 thin films,

IEEE Electron Device Letters 40, 570 (2019).


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  56. (2019d) Jun-Hui Yuan, Biao Zhang, Ya-Qian Song, Jia-Fu Wang, Kan-Hao Xue*, and Xiang-Shui Miao,

Planar penta-transition metal phosphide and arsenide as narrow-gap semiconductors with ultrahigh carrier mobility,

Journal of Materials Science 54, 7035 (2019).


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  55. (2019c) Jun-Hui Yuan, Alessandro Cresti, Kan-Hao Xue*, Ya-Qian Song, Hai-Lei Su, Li-Heng Li, Nai-Hua Miao*, Zhi-Mei Sun, Jia-Fu Wang, and Xiang-Shui Miao,

TlP5: an unexplored direct band gap 2D semiconductor with ultra-high carrier mobility,

Journal of Materials Chemistry C 7, 639 (2019).


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  54. (2019b) Ya-Qian Song, Jun-Hui Yuan, Li-Heng Li, Ming Xu, Jia-Fu Wang, Kan-Hao Xue*, and Xiang-Shui Miao,

KTlO: a metal shrouded 2D semiconductor with high carrier mobility and tunable magnetism,

Nanoscale 11, 1131 (2019).


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  53. (2019a) Jun-Hui Yuan, Ya-Qian Song, Qi Chen, Kan-Hao Xue*, and Xiang-Shui Miao,

Single-layer planar penta-X2N4 (X = Ni, Pd and Pt) as direct-bandgap semiconductors from first principle calculations,

Applied Surface Science 469, 456 (2019).


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