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Peer-reviewed journal papers
 
     
  70. (2019r) Ge-Qi Mao, Kan-Hao Xue*, Ya-Qian Song, Wei Wu, Jun-Hui Yuan, Li-Heng Li, Huajun Sun, Shibing Long, and Xiang-Shui Miao,

Oxygen migration around the filament region in HfOx memristors,

AIP Advances 9, 105007 (2019).


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Copyright (2019) the authors, published by American Institute of Physics. This article is an OPEN ACCESS article and may be found at https://aip.scitation.org/doi/10.1063/1.5122989.
 
     
  69. (2019q) Bo Yang, Lixiao Yin, Guangda Niu*, Jun-Hui Yuan, Kan-Hao Xue, Zhifang Tan, Xiang-Shui Miao, Ming Niu, Xinyuan Du, Haisheng Song, Efrat Lifshitz, and Jiang Tang*,

Lead-free halide Rb2CuBr3 as sensitive X-ray scintillator,

Advanced Materials 31, 1904711 (2019).


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  68. (2019p) Weicheng Pan, Bo Yang, Guangda Niu*, Kan-Hao Xue, Xinyuan Du, Lixiao Yin, Muyi Zhang, Haodi Wu, Xiang-Shui Miao, and Jiang Tang*,

Hot-pressed CsPbBr3 quasi-monocrystalline film for sensitive direct X-ray detection,

Advanced Materials 31, 1904405 (2019).


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  67. (2019o) Mingrui Jiang, Biao Wang, Kan-Hao Xue, Nian Liu, Huajun Sun*, Hong Lu, and Xiangshui Miao,

Self-compliance characteristics and switching degradation in TaOx-based memristors,

Applied Physics Express 12, 104003 (2019).


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  66. (2019n) Jinfeng Lin, Yang Zhou, Qiling Lu, Xiao Wu*, Cong Lin, Tengfei Lin, Kan-Hao Xue, Xiangshui Miao, Baisheng Sa*, and Zhimei Sun,

Reversible modulation of photoenergy in Sm-doped (K0.5Na0.5)NbO3 transparent ceramics via photochromic behavior,

Journal of Materials Chemistry A 7, 19374 (2019).


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  65. (2019m) Jun-Hui Yuan, Kan-Hao Xue*, Qi Chen, Leonardo R. C. Fonseca, and Xiang-Shui Miao,

Ab initio simulation of Ta2O5: A high symmetry ground state phase with application to interface calculation,

Annalen der Physik 531, 1800524 (2019).


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  64. (2019l) Yun-Lai Zhu, Jun-Hui Yuan, Ya-Qian Song, Kan-Hao Xue*, Sheng Wang, Chen Lian, Zhao-Nan Li, Ming Xu, Xiao-Min Cheng*, and Xiang-Shui Miao,

Promising photocatalysts with high carrier mobility for water splitting in monolayer Ge2P4S2 and Ge2As4S2,

International Journal of Hydrogen Energy 44, 21536 (2019).


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  63. (2019k) Jun-Hui Yuan, Kan-Hao Xue*, Jia-Fu Wang, and Xiang-Shui Miao,

Gallium Thiophosphate: An Emerging Bidirectional Auxetic Two-Dimensional Crystal with Wide Direct Band Gap,

Journal of Physical Chemistry Letters 10, 4455 (2019).


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  62. (2019j) Ping Tang, Jun-Hui Yuan, Ya-Qian Song, Ming Xu, Kan-Hao Xue*, and Xiang-Shui Miao,

BaAs3: a narrow gap 2D semiconductor with vacancy-induced semiconductor¨Cmetal transition from first principles,

Journal of Materials Science 54, 12676 (2019).


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  61. (2019i) Jinfeng Lin, Qiling Lu, Xiao Wu*, Hailing Sun, Cong Lin, Tengfei Lin, Kan-Hao Xue, Xiangshui Miao, Baisheng Sa*, and Zhimei Sun,

In situ boost and reversible modulation of dual-mode photoluminescence under an electric field in a tape-casting-based Er-doped K0.5Na0.5NbO3 laminar ceramic,

Journal of Materials Chemistry C 7, 7885 (2019).


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  60. (2019h) Zhaonan Li, Baoyi Tian, Kan-Hao Xue, Biao Wang, Ming Xu, Hong Lu, Huajun Sun*, and Xiangshui Miao,

Coexistence of digital and analog resistive switching with low operation voltage in oxygen-gradient HfOx memristors,

IEEE Electron Device Letters 40, 1068 (2019).


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  59. (2019g) Yun-Lai Zhu, Jun-Hui Yuan, Ya-Qian Song, Sheng Wang, Kan-Hao Xue*, Ming Xu, Xiao-Min Cheng*, and Xiang-Shui Miao,

Two-dimensional silicon chalcogenides with high carrier mobility for photocatalytic water splitting,

Journal of Materials Science 54, 11485 (2019).


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  58. (2019f) Bo Yang, Weicheng Pan, Haodi Wu, Guangda Niu*, Jun-Hui Yuan, Kan-Hao Xue, Lixiao Yin, Xinyuan Du, Xiang-Shui Miao, Xiaoquan Yang, Qingguo Xie, and Jiang Tang*,

Heteroepitaxial passivation of Cs2AgBiBr6 wafers with suppressed ionic migration for X-ray imaging,

Nature Communications 10, 1989 (2019).


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  57. (2019e) Qing Luo, Haili Ma, Hailei Su, Kan-Hao Xue, Rongrong Cao, Zhaomeng Gao, Jie Yu, Tiancheng Gong, Xiaoxin Xu, Jiahao Yin, Peng Yuan, Lu Tai, Danian Dong, Shibing Long, Qi Liu, Xiang-Shui Miao, Hangbing Lv*, and Ming Liu,

Composition-dependent ferroelectric properties in sputtered HfxZr1-xO2 thin films,

IEEE Electron Device Letters 40, 570 (2019).


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  56. (2019d) Jun-Hui Yuan, Biao Zhang, Ya-Qian Song, Jia-Fu Wang, Kan-Hao Xue*, and Xiang-Shui Miao,

Planar penta-transition metal phosphide and arsenide as narrow-gap semiconductors with ultrahigh carrier mobility,

Journal of Materials Science 54, 7035 (2019).


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  55. (2019c) Jun-Hui Yuan, Alessandro Cresti, Kan-Hao Xue*, Ya-Qian Song, Hai-Lei Su, Li-Heng Li, Nai-Hua Miao*, Zhi-Mei Sun, Jia-Fu Wang, and Xiang-Shui Miao,

TlP5: an unexplored direct band gap 2D semiconductor with ultra-high carrier mobility,

Journal of Materials Chemistry C 7, 639 (2019).


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  54. (2019b) Ya-Qian Song, Jun-Hui Yuan, Li-Heng Li, Ming Xu, Jia-Fu Wang, Kan-Hao Xue*, and Xiang-Shui Miao,

KTlO: a metal shrouded 2D semiconductor with high carrier mobility and tunable magnetism,

Nanoscale 11, 1131 (2019).


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  53. (2019a) Jun-Hui Yuan, Ya-Qian Song, Qi Chen, Kan-Hao Xue*, and Xiang-Shui Miao,

Single-layer planar penta-X2N4 (X = Ni, Pd and Pt) as direct-bandgap semiconductors from first principle calculations,

Applied Surface Science 469, 456 (2019).


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  52. (2018n) B. Wang, K. H. Xue, H. J. Sun*, Z. N. Li, W. Wu, P. Yan, N. Liu, B. Y. Tian, X. X. Liu, and X. S. Miao,

Performance enhancement of TaOx resistive switching memory using graded oxygen content,

Applied Physics Letters 113, 183501 (2018).


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  51. (2018m) Kan-Hao Xue, Yun Li, Hai-Lei Su, Jun-Hui Yuan, Yi Li, Zhuo-Rui Wang, Biao Zhang, and Xiang-Shui Miao*,

Theoretical investigation of the Ag filament morphology in conductive bridge random access memories,

Journal of Applied Physics 124, 152125 (2018).


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Copyright (2018) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The above article appeared in (Kan-Hao Xue, Yun Li, Hai-Lei Su, Jun-Hui Yuan, Yi Li, Zhuo-Rui Wang, Biao Zhang, and Xiang-Shui Miao, Journal of Applied Physics 124, 152125 (2018), DOI:10.1063/1.5042165) and may be found at https://aip.scitation.org/doi/10.1063/1.5042165.
 
     
  50. (2018l) Jun-Hui Yuan, Qi Chen, Leonardo R C Fonseca, Ming Xu, Kan-Hao Xue*, and Xiang-Shui Miao,

GGA-1/2 self-energy correction for accurate band structure calculations: the case of resistive switching oxides,

Journal of Physics Communications 2, 105005 (2018).


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Copyright (2018) the authors, published by Institute of Physics, UK. This article is an OPEN ACCESS article and may be found at http://iopscience.iop.org/article/10.1088/2399-6528/aade7e.
 
     
  49. (2018k) Zhuo-Rui Wang, Yi Li*, Yu-Ting Su, Ya-Xiong Zhou, Long Cheng, Ting-Chang Chang, Kan-Hao Xue, Simon M. Sze, and Xiang-Shui Miao,

Efficient implementation of Boolean and full-adder functions with 1T1R RRAMs for beyond von Neumann in-memory computing,

IEEE Transactions on Electron Devices 65, 4659 (2018).


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  48. (2018j) Kan-Hao Xue*, Jun-Hui Yuan, Leonardo R.C. Fonseca*, and Xiang-Shui Miao*,

Improved LDA-1/2 method for band structure calculations in covalent semiconductors,

Computational Materials Science 153, 493 (2018).


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  47. (2018i) Kan-Hao Xue, Hai-Lei Su, Yi Li, Hua-Jun Sun, Wei-Fan He, Ting-Chang Chang*, Lin Chen*, David Wei Zhang, and Xiang-Shui Miao*,

Model of dielectric breakdown in hafnia-based ferroelectric capacitors,

Journal of Applied Physics 124, 024103 (2018).


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  46. (2018h) Ya-Xiong Zhou, Yi Li*, Nian Duan, Zhuo-Rui Wang, Ke Lu, Miao-Miao Jin, Long Cheng, Si-Yu Hu, Ting-Chang Chang, Hua-Jun Sun, Kan-Hao Xue, and Xiang-Shui Miao*,

Boolean and Sequential Logic in a One-Memristor-One-Resistor (1M1R) Structure for In-Memory Computing,

Advanced Electronic Materials 4, 1800229 (2018).


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