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Peer-reviewed journal papers | Conference   *   Shell DFT-1/2 | Ferroelectrics
 
     
  99. (2021k) Li-Heng Li, Kan-Hao Xue*, Lan-Qing Zou, Jun-Hui Yuan, Huajun Sun, and Xiangshui Miao,

Multilevel switching in Mg-doped HfOx memristor through the mutual-ion effect,

Applied Physics Letters 119, 153505 (2021).


Impact Factor: 3.971

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  98. (2021j) Lei Tong, Zhuiri Peng, Runfeng Lin, Zheng Li, Yilun Wang, Xinyu Huang, Kan-Hao Xue, Hangyu Xu, Feng Liu, Hui Xia, Peng Wang, Mingsheng Xu, Wei Xiong, Weida Hu*, Jianbin Xu, Xinliang Zhang, Lei Ye*, and Xiangshui Miao,

2D materials¨Cbased homogeneous transistor-memory architecture for neuromorphic hardware,

Science 373, 1353 (2021).


Impact Factor: 63.714

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  97. (2021i) Yuan Qin, Li-Heng Li, Zhaoan Yu, Feihong Wu, Danian Dong, Wei Guo, Zhongfang Zhang, Jun-Hui Yuan, Kan-Hao Xue*, Xiangshui Miao, and Shibing Long*,

Ultra-High Performance Amorphous Ga2O3 Photodetector Arrays for Solar-Blind Imaging,

Advanced Science 8, 2101106 (2021).


Impact Factor: 17.521

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  96. (2021h) Zhifang Tan, Jincong Pang, Guangda Niu*, Jun-Hui Yuan, Kan-Hao Xue, Xiangshui Miao, Weijian Tao, Haiming Zhu, Zhigang Li, Hongtao Zhao, Xinyuan Du, and Jiang Tang*,

Tailoring the electron and hole dimensionality to achieve efficient and stable metal halide perovskite scintillators,

Nanophotonics 10, 2249 (2021).


Impact Factor: 7.923

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  95. (2021g) Xinyuan Du, Jiapu Li, Guangda Niu*, Jun-Hui Yuan, Kan-Hao Xue, Mengling Xia, Weicheng Pan, Xiaofei Yang, Benpeng Zhu*, and Jiang Tang,

Lead halide perovskite for efficient optoacoustic conversion and application toward high-resolution ultrasound imaging,

Nature Communications 12, 3348 (2021).


Impact Factor: 17.694

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  94. (2021f) Long Liu, Yi Li, Xiaodi Huang, Jia Chen, Zhe Yang, Kan-Hao Xue, Ming Xu*, Huawei Chen, Peng Zhou*, and Xiangshui Miao*,

Low-Power Memristive Logic Device Enabled by Controllable Oxidation of 2D HfSe2 for In-Memory Computing,

Advanced Science 8, 2005038 (2021).


Impact Factor: 17.521

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  93. (2021e) Chundong Wang*, Yifan Tian*, Yu Gu, Kan-Hao Xue*, Huachuan Sun, Xiangshui Miao, and Liming Dai,

Plasma-induced moieties impart super-efficient activity to hydrogen evolution electrocatalysts,

Nano Energy 85, 106030 (2021).


Impact Factor: 19.069

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  92. (2021d) Tian-Qing Wan, Yi-Fan Lu, Jun-Hui Yuan, Hao-Yang Li, Yi Li*, Xiao-Di Huang, Kan-Hao Xue*, and Xiang-Shui Miao,

12.7 MA/cm2 on-current density and high uniformity realized in AgGeSe/Al2O3 selectors,

IEEE Electron Device Letters 42, 613 (2021).


Impact Factor: 4.816

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  91. (2021c) Yun-Lai Zhu, Kan-Hao Xue, Xiao-Min Cheng*, Chong Qiao, Jun-Hui Yuan, Li-Heng Li, and Xiang-Shui Miao,

Uniform and robust TiN/HfO2/Pt memristor through interfacial Al-doping engineering,

Applied Surface Science 550, 149274 (2021).


Impact Factor: 7.392

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  90. (2021b) Na Bai, Baoyi Tian, Ge-Qi Mao, Kan-Hao Xue*, Tao Wang, Jun-Hui Yuan, Xiaoxin Liu, Zhaonan Li, Shen Guo, Zuopai Zhou, Nian Liu, Hong Lu, Xiaodong Tang, Huajun Sun*, and Xiangshui Miao,

Homo-layer hafnia-based memristor with large analog switching window,

Applied Physics Letters 118, 043502 (2021).


Impact Factor: 3.971

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  89. (2021a) Huachuan Sun, Wei Zhang, Jian-Gang Li, Zhishan Li, Xiang Ao, Kan-Hao Xue, Kostya Ken Ostrikov, Jiang Tang, and Chundong Wang*,

Rh-engineered ultrathin NiFe-LDH nanosheets enable highly-efficient overall water splitting and urea electrolysis,

Applied Catalysis B: Environmental 284, 119740 (2021).


Impact Factor: 24.319

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  88. (2020p) Zhishan Li, Kan-Hao Xue, Jinsong Wang, Jian-Gang Li, Xiang Ao, Huachuan Sun, Xiaoqiang Song, Wen Lei, Yulin Cao, and Chundong Wang*,

Cation and anion co-doped perovskite nanofibers for highly efficient electrocatalytic oxygen evolution,

ACS Applied Materials & Interfaces 12, 41259 (2020).


Impact Factor: 10.383

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  87. (2020o) Wanru Gao, Lixiao Yin, Jun-Hui Yuan, Kan-Hao Xue, Guangda Niu*, Bo Yang, Qingsong Hu, Xinxing Liu, and Jiang Tang,

Lead-free violet-emitting K2CuCl3 single crystal with high photoluminescence quantum yield,

Organic Electronics 86, 105903 (2020).


Impact Factor: 3.868

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  86. (2020n) Hao©\Yang Li, Xiao©\Di Huang, Jun©\Hui Yuan, Yi©\Fan Lu, Tian©\Qing Wan, Yi Li*, Kan©\Hao Xue*, Yu©\Hui He, Ming Xu, Hao Tong, and Xiang©\Shui Miao,

Controlled memory and threshold switching behaviors in a heterogeneous memristor for neuromorphic computing,

Advanced Electronic Materials 6, 2000309 (2020).


Impact Factor: 7.633

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  85. (2020m) Wanru Gao, Guangda Niu*, Lixiao Yin, Bo Yang, Jun-Hui Yuan, Dongdong Zhang, Kan-Hao Xue, Xiangshui Miao, Qingsong Hu, Xinyuan Du, and Jiang Tang*,

One-dimensional all-inorganic K2CuBr3 with violet emission as efficient X-ray scintillators,

ACS Applied Electronic Materials 2, 2242 (2020).


Impact Factor: 4.494

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  84. (2020l) Jun-Hui Yuan, Ge-Qi Mao, Kan-Hao Xue*, Jiafu Wang, and Xiang-Shui Miao,

A new family of two-dimensional ferroelastic semiconductors with negative Poisson´s ratios,

Nanoscale 12, 14150 (2020).


Impact Factor: 8.307

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  83. (2020k) Mengling Xia, Jun-Hui Yuan, Guangda Niu*, Xinyuan Du, Lixiao Yin, Weicheng Pan, Jiajun Luo, Zhigang Li, Hongtao Zhao, Kan-Hao Xue, Xiangshui Miao, and Jiang Tang*,

Unveiling the structural descriptor of A3B2X9 perovskite derivatives toward X-ray detectors with low detection limit and high stability,

Advanced Functional Materials 30, 1910648 (2020).


Impact Factor: 19.924

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  82. (2020j) Meng Xu, Chong Qiao, Kan-Hao Xue, Hao Tong, Xiaomin Cheng, Songyou Wang, Cai-Zhuang Wang, Kai-Ming Ho, Ming Xu*, and Xiangshui Miao,

Polyamorphism in K2Sb8Se13 for multi-level phase-change memory,

Journal of Materials Chemistry C 8, 6364 (2020).


Impact Factor: 8.067

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  81. (2020i) Xiao Di Huang, Yi Li*, Hao Yang Li, Yi Fan Lu, Kan Hao Xue, and Xiang Shui Miao,

Enhancement of DC/AC resistive switching performance in AlOx memristor by two-technique bilayer approach,

Applied Physics Letters 116, 173504 (2020).


Impact Factor: 3.971

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  80. (2020h) Mengling Xia, Jun-Hui Yuan, Jiajun Luo, Weicheng Pan, Haodi Wu, Qi Chen, Kan-Hao Xue*, Xiangshui Miao, Guangda Niu*, and Jiang Tang,

Two-dimensional perovskites as sensitive strain sensors,

Journal of Materials Chemistry C 8, 3814 (2020).


Impact Factor: 8.067

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  79. (2020g) Jun-Hui Yuan, Li-Heng Li, Wei Zhang, Kan-Hao Xue*, Chundong Wang, Jiafu Wang, Xiang-Shui Miao, and Xiao Cheng Zeng*,

Pt5Se4 monolayer: A highly efficient electrocatalyst toward hydrogen and oxygen electrode reactions,

ACS Applied Materials & Interfaces 12, 13896 (2020).


Impact Factor: 10.383

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  78. (2020f) Xiao-Di Huang, Yi Li*, Hao-Yang Li, Kan-Hao Xue, Xingsheng Wang, and Xiang-Shui Miao,

Forming-free, fast, uniform, and high endurance resistive switching from cryogenic to high temperatures in W/AlOx/Al2O3/Pt bilayer memristor,

IEEE Electron Device Letters 41, 549 (2020).


Impact Factor: 4.816

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  77. (2020e) Yuan Qin, Liheng Li, Xiaolong Zhao, Gary S. Tompa, Hang Dong, Guangzhong Jian, Qiming He, Pengju Tan, Xiaohu Hou, Zhongfang Zhang, Shunjie Yu, Haiding Sun*, Guangwei Xu, Xiangshui Miao, Kanhao Xue*, Shibing Long*, and Ming Liu,

Metal¨Csemiconductor¨Cmetal ε-Ga2O3 solar-blind photodetectors with a record-high responsivity rejection ratio and their gain mechanism,

ACS Photonics 7, 812 (2020).


Impact Factor: 7.077

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  76. (2020d) Xue Zhao, Guangda Niu*, Jinsong Zhu, Bo Yang, Jun-Hui Yuan, Shunran Li, Wanru Gao, Qingsong Hu, Lixiao Yin, Kan-Hao Xue, Efrat Lifshitz*, Xiangshui Miao, and Jiang Tang*,

All-Inorganic Copper Halide as a Stable and Self-Absorption-Free X-ray Scintillator,

Journal of Physical Chemistry Letters 11, 1873 (2020).


Impact Factor: 6.888

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  75. (2020c) Li-Heng Li, Jun-Hui Yuan, Kan-Hao Xue*, Meng Xu, Ming Xu, Jia-Fu Wang, and Xiang-Shui Miao,

Synergic Effect in a New Electrocatalyst Ni2SbTe2 for Oxygen Reduction Reaction,

Journal of Physical Chemistry C 124, 3671 (2020).


Impact Factor: 4.177

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  74. (2020b) Luman Zhang, Luyao Song, Hongwei Dai, Jun-Hui Yuan, Mingshan Wang, Xinyu Huang, Lei Qiao, Hui Cheng, Xia Wang, Wei Ren, Xiangshui Miao, Lei Ye*, Kan-Hao Xue*, and Jun-Bo Han*,

Substrate-modulated ferromagnetism of two-dimensional Fe3GeTe2,

Applied Physics Letters 116, 042402 (2020).


Impact Factor: 3.971

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  73. (2020a) Wen-Yu Fang, Ping-An Li, Jun-Hui Yuan*, Kan-Hao Xue, and Jia-Fu Wang,

Nb2SiTe4 and Nb2GeTe4: Unexplored 2D ternary layered tellurides with high stability, narrow band gap and high electron mobility,

Journal of Electronic Materials 49, 959 (2020).


Impact Factor: 2.047

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  72. (2019t) Jejune Park, Kan-Hao Xue, Mireille Mouis, François Triozon, and Alessandro Cresti*,

Electron transport properties of mirror twin grain boundaries in molybdenum disulfide: Impact of disorder,

Physical Review B 100, 235403 (2019).


Impact Factor: 3.908

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  71. (2019s) Nian Duan, Yi Li*, Hsiao-Cheng Chiang, Jia Chen, Wen-Qian Pan, Ya-Xiong Zhou, Yu-Chieh Chien, Yu-Hui He, Kan-Hao Xue, Gang Liu, Ting-Chang Chang*, and Xiang-Shui Miao*,

An electro-photo-sensitive synaptic transistor for edge neuromorphic visual systems,

Nanoscale 11, 17590 (2019).


Impact Factor: 8.307

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  70. (2019r) Ge-Qi Mao, Kan-Hao Xue*, Ya-Qian Song, Wei Wu, Jun-Hui Yuan, Li-Heng Li, Huajun Sun, Shibing Long, and Xiang-Shui Miao,

Oxygen migration around the filament region in HfOx memristors,

AIP Advances 9, 105007 (2019).


Impact Factor: 1.697

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Copyright (2019) the authors, published by American Institute of Physics. This article is an OPEN ACCESS article and may be found at https://aip.scitation.org/doi/10.1063/1.5122989.
 
     
  69. (2019q) Bo Yang, Lixiao Yin, Guangda Niu*, Jun-Hui Yuan, Kan-Hao Xue, Zhifang Tan, Xiang-Shui Miao, Ming Niu, Xinyuan Du, Haisheng Song, Efrat Lifshitz, and Jiang Tang*,

Lead-free halide Rb2CuBr3 as sensitive X-ray scintillator,

Advanced Materials 31, 1904711 (2019).


Impact Factor: 32.086

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  68. (2019p) Weicheng Pan, Bo Yang, Guangda Niu*, Kan-Hao Xue, Xinyuan Du, Lixiao Yin, Muyi Zhang, Haodi Wu, Xiang-Shui Miao, and Jiang Tang*,

Hot-pressed CsPbBr3 quasi-monocrystalline film for sensitive direct X-ray detection,

Advanced Materials 31, 1904405 (2019).


Impact Factor: 32.086

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  67. (2019o) Mingrui Jiang, Biao Wang, Kan-Hao Xue, Nian Liu, Huajun Sun*, Hong Lu, and Xiangshui Miao,

Self-compliance characteristics and switching degradation in TaOx-based memristors,

Applied Physics Express 12, 104003 (2019).


Impact Factor: 2.819

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  66. (2019n) Jinfeng Lin, Yang Zhou, Qiling Lu, Xiao Wu*, Cong Lin, Tengfei Lin, Kan-Hao Xue, Xiangshui Miao, Baisheng Sa*, and Zhimei Sun,

Reversible modulation of photoenergy in Sm-doped (K0.5Na0.5)NbO3 transparent ceramics via photochromic behavior,

Journal of Materials Chemistry A 7, 19374 (2019).


Impact Factor: 14.511

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  65. (2019m) Jun-Hui Yuan, Kan-Hao Xue*, Qi Chen, Leonardo R. C. Fonseca, and Xiang-Shui Miao,

Ab initio simulation of Ta2O5: A high symmetry ground state phase with application to interface calculation,

Annalen der Physik 531, 1800524 (2019).


Impact Factor: 3.012

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  64. (2019l) Yun-Lai Zhu, Jun-Hui Yuan, Ya-Qian Song, Kan-Hao Xue*, Sheng Wang, Chen Lian, Zhao-Nan Li, Ming Xu, Xiao-Min Cheng*, and Xiang-Shui Miao,

Promising photocatalysts with high carrier mobility for water splitting in monolayer Ge2P4S2 and Ge2As4S2,

International Journal of Hydrogen Energy 44, 21536 (2019).


Impact Factor: 7.139

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  63. (2019k) Jun-Hui Yuan, Kan-Hao Xue*, Jia-Fu Wang, and Xiang-Shui Miao,

Gallium Thiophosphate: An Emerging Bidirectional Auxetic Two-Dimensional Crystal with Wide Direct Band Gap,

Journal of Physical Chemistry Letters 10, 4455 (2019).


Impact Factor: 6.888

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  62. (2019j) Ping Tang, Jun-Hui Yuan, Ya-Qian Song, Ming Xu, Kan-Hao Xue*, and Xiang-Shui Miao,

BaAs3: a narrow gap 2D semiconductor with vacancy-induced semiconductor¨Cmetal transition from first principles,

Journal of Materials Science 54, 12676 (2019).


Impact Factor: 4.682

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  61. (2019i) Jinfeng Lin, Qiling Lu, Xiao Wu*, Hailing Sun, Cong Lin, Tengfei Lin, Kan-Hao Xue, Xiangshui Miao, Baisheng Sa*, and Zhimei Sun,

In situ boost and reversible modulation of dual-mode photoluminescence under an electric field in a tape-casting-based Er-doped K0.5Na0.5NbO3 laminar ceramic,

Journal of Materials Chemistry C 7, 7885 (2019).


Impact Factor: 8.067

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  60. (2019h) Zhaonan Li, Baoyi Tian, Kan-Hao Xue, Biao Wang, Ming Xu, Hong Lu, Huajun Sun*, and Xiangshui Miao,

Coexistence of digital and analog resistive switching with low operation voltage in oxygen-gradient HfOx memristors,

IEEE Electron Device Letters 40, 1068 (2019).


Impact Factor: 4.816

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  59. (2019g) Yun-Lai Zhu, Jun-Hui Yuan, Ya-Qian Song, Sheng Wang, Kan-Hao Xue*, Ming Xu, Xiao-Min Cheng*, and Xiang-Shui Miao,

Two-dimensional silicon chalcogenides with high carrier mobility for photocatalytic water splitting,

Journal of Materials Science 54, 11485 (2019).


Impact Factor: 4.682

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  58. (2019f) Bo Yang, Weicheng Pan, Haodi Wu, Guangda Niu*, Jun-Hui Yuan, Kan-Hao Xue, Lixiao Yin, Xinyuan Du, Xiang-Shui Miao, Xiaoquan Yang, Qingguo Xie, and Jiang Tang*,

Heteroepitaxial passivation of Cs2AgBiBr6 wafers with suppressed ionic migration for X-ray imaging,

Nature Communications 10, 1989 (2019).


Impact Factor: 17.694

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  57. (2019e) Qing Luo, Haili Ma, Hailei Su, Kan-Hao Xue, Rongrong Cao, Zhaomeng Gao, Jie Yu, Tiancheng Gong, Xiaoxin Xu, Jiahao Yin, Peng Yuan, Lu Tai, Danian Dong, Shibing Long, Qi Liu, Xiang-Shui Miao, Hangbing Lv*, and Ming Liu,

Composition-dependent ferroelectric properties in sputtered HfxZr1-xO2 thin films,

IEEE Electron Device Letters 40, 570 (2019).


Impact Factor: 4.816

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  56. (2019d) Jun-Hui Yuan, Biao Zhang, Ya-Qian Song, Jia-Fu Wang, Kan-Hao Xue*, and Xiang-Shui Miao,

Planar penta-transition metal phosphide and arsenide as narrow-gap semiconductors with ultrahigh carrier mobility,

Journal of Materials Science 54, 7035 (2019).


Impact Factor: 4.682

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  55. (2019c) Jun-Hui Yuan, Alessandro Cresti, Kan-Hao Xue*, Ya-Qian Song, Hai-Lei Su, Li-Heng Li, Nai-Hua Miao*, Zhi-Mei Sun, Jia-Fu Wang, and Xiang-Shui Miao,

TlP5: an unexplored direct band gap 2D semiconductor with ultra-high carrier mobility,

Journal of Materials Chemistry C 7, 639 (2019).


Impact Factor: 8.067

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  54. (2019b) Ya-Qian Song, Jun-Hui Yuan, Li-Heng Li, Ming Xu, Jia-Fu Wang, Kan-Hao Xue*, and Xiang-Shui Miao,

KTlO: a metal shrouded 2D semiconductor with high carrier mobility and tunable magnetism,

Nanoscale 11, 1131 (2019).


Impact Factor: 8.307

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  53. (2019a) Jun-Hui Yuan, Ya-Qian Song, Qi Chen, Kan-Hao Xue*, and Xiang-Shui Miao,

Single-layer planar penta-X2N4 (X = Ni, Pd and Pt) as direct-bandgap semiconductors from first principle calculations,

Applied Surface Science 469, 456 (2019).


Impact Factor: 7.392

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  52. (2018n) B. Wang, K. H. Xue, H. J. Sun*, Z. N. Li, W. Wu, P. Yan, N. Liu, B. Y. Tian, X. X. Liu, and X. S. Miao,

Performance enhancement of TaOx resistive switching memory using graded oxygen content,

Applied Physics Letters 113, 183501 (2018).


Impact Factor: 3.971

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  51. (2018m) Kan-Hao Xue, Yun Li, Hai-Lei Su, Jun-Hui Yuan, Yi Li, Zhuo-Rui Wang, Biao Zhang, and Xiang-Shui Miao*,

Theoretical investigation of the Ag filament morphology in conductive bridge random access memories,

Journal of Applied Physics 124, 152125 (2018).


Impact Factor: 2.877

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Copyright (2018) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The above article appeared in (Kan-Hao Xue, Yun Li, Hai-Lei Su, Jun-Hui Yuan, Yi Li, Zhuo-Rui Wang, Biao Zhang, and Xiang-Shui Miao, Journal of Applied Physics 124, 152125 (2018), DOI:10.1063/1.5042165) and may be found at https://aip.scitation.org/doi/10.1063/1.5042165.
 
     
  50. (2018l) Jun-Hui Yuan, Qi Chen, Leonardo R C Fonseca, Ming Xu, Kan-Hao Xue*, and Xiang-Shui Miao,

GGA-1/2 self-energy correction for accurate band structure calculations: the case of resistive switching oxides,

Journal of Physics Communications 2, 105005 (2018).


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Copyright (2018) the authors, published by Institute of Physics, UK. This article is an OPEN ACCESS article and may be found at http://iopscience.iop.org/article/10.1088/2399-6528/aade7e.
 
     
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