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Peer-reviewed journal papers
 
     
  13. Christopher R. McWilliams*, Jolanta Celinska, Carlos A. Paz de Araujo, and Kan-Hao Xue,

Re-programmable antifuse FPGA utilizing resistive CeRAM elements,

Integrated Ferroelectrics 124, 97 (2011).


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  12. Kan-Hao Xue*, Carlos A. Paz de Araujo, Jolanta Celinska, and Christopher McWilliams,

Investigation on divalent metal substituted bismuth titanate ferroelectric thin films,

Integrated Ferroelectrics 124, 26 (2011).


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  11. Christopher R. McWilliams*, Jolanta Celinska, Carlos A. Paz de Araujo, and Kan-Hao Xue,

Device characterization of correlated electron random access memories,

Journal of Applied Physics 109, 091608 (2011).


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  10. Jolanta Celinska*, Christopher McWilliams, Carlos Paz de Araujo, and Kan-Hao Xue,

Material and process optimization of correlated electron random access memories (CeRAMs),

Journal of Applied Physics 109, 091603 (2011).


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  9. Kan-Hao Xue*, Carlos A. Paz de Araujo, Jolanta Celinska, and Christopher McWilliams,

A non-filamentary model for unipolar switching transition metal oxide resistance random access memories,

Journal of Applied Physics 109, 091602 (2011).


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Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The above article appeared in (Kan-Hao Xue, Carlos A. Paz de Araujo, Jolanta Celinska, and Christopher McWilliams, Journal of Applied Physics 109, 091602 (2011), DOI:10.1063/1.3581193) and may be found at http://jap.aip.org/resource/1/japiau/v109/i9/p091602_s1.
 
     
  8. Kan-Hao Xue*, Carlos A. Paz de Araujo, and Jolanta Celinska,

A comparative study on Bi4Ti3O12 and Bi3.25La0.75Ti3O12 ferroelectric thin films derived by metal organic decomposition,

Journal of Applied Physics 107, 104123 (2010).


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Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The above article appeared in (Kan-Hao Xue, Carlos A. Paz de Araujo, and Jolanta Celinska, Journal of Applied Physics 107, 104123 (2010), DOI:10.1063/1.3428968) and may be found at http://jap.aip.org/resource/1/japiau/v107/i10/p104123_s1.
 
     
  7. Kan-Hao Xue*, Jolanta Celinska, and Carlos A. Paz de Araujo,

Low temperature preparation of ferroelectric bismuth titanate thin films,

Applied Physics Letters 95, 052908 (2009).


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  6. TianLing Ren*, MingMing Zhang, Ze Jia, LinKai Wang, ChaoGang Wei, KanHao Xue, YingJie Zhang, Hong Hu, Dan Xie, and LiTian Liu,

Model and key fabrication technologies for FeRAM,

ECS Transactions 22, 217 (2009).


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  5. Dan Xie*, Wenkao Yu, Yafeng Luo, Kanhao Xue, Tianling Ren, and Litian Liu,

Etching behavior and damage rejuvenation of top electrode and Bi3.15Nd0.85Ti3O12 films applied in ferroelectric random access memory devices,

Japanese Journal of Applied Physics 48, 050209 (2009).


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  4. Xin-Yi Wen*, Jun Yu, Tian-Ling Ren, Kan-Hao Xue, Wen-Li Zhou, and Yun-Bo Wang,

Studies on the fatigue behavior of ferroelectric film using Preisach approach,

Integrated Ferroelectrics 99, 3 (2008).


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  3. Kan-Hao Xue, Tian-Ling Ren*, Dan Xie, Ze Jia, Ming-Ming Zhang, and Li-Tian Liu,

Nitrogen-rich titanium nitride serving as Pt-Al diffusion barrier for FeRAM application,

Integrated Ferroelectrics 96, 19 (2008).


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  2. Kan-Hao Xue, Tian-Ling Ren*, Tian-Zhi Liu, Dan Xie, Ze Jia, and Li-Tian Liu,

Investigation on annealing and etching effects for Pt/Bi3.15Nd0.85Ti3O12/Pt ferroelectric capacitors,

Japanese Journal of Applied Physics 46, 4200 (2007).


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  1. Kan-Hao Xue*, Zhi-Gang Zhang, Dan Xie, Chao-Gang Wei, Tian-Zhi Liu, Tian-Ling Ren, and Li-Tian Liu,

Studies on the relax behavior of SrBi2Ta2O9 thin films,

Integrated Ferroelectrics 79, 81 (2006).


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