Citation report: by journal papers only, excluding self-citation
  1.  Konstantin Z Rushchanskii, Stefan Bluegel, Marjana Lezaic,  Faraday Discussions ,  (2018).
  2.  K. Kirievsky, Y. Orr, A. O¡¯Neill, D. Fuks, Y. Gelbstein,  Intermetallics 98, 154-160 (2018).
  3.  Blanka Magyari-Köpe, Yali Song, Dan Duncan, Liang Zhao, Yoshio Nishi,  APL Materials 6, 058102 (2018).
  4.  Aize Hao, Muhammad Ismail, Shuai He, Ni Qin, Ruqi Chen, Anwar Manzoor Rana, Dinghua Bao,  Materials Science and Engineering: B 229, 86-95 (2018).
  5.  Sera Kwon, Dae-Kyoung Kim, Mann-Ho Cho, Kwun-Bum Chung,  Thin Solid Films 645, 102-107 (2018).
  6.  B. Traore, P. Blaise, B. Skl¨¦nard, E. Vianello, B. Magyari-Köpe, Y. Nishi,  IEEE Transactions on Electron Devices 65, 507-513 (2018).
  7.  P. Bousoulas, I. Michelakaki, E. Skotadis, M. Tsigkourakos, D. Tsoukalas,  IEEE Transactions on Electron Devices 64, 3151-3158 (2017).
  8.  B. Traore, P. Blaise, E. Vianello, B. Skl¨¦nard,  Journal of Computational Electronics 16, 1045-1056 (2017).
  9.  Dan Duncan, Blanka Magyari-Kope, Yoshio Nishi,  Physical Review Applied 7, 034020 (2017).
  10.  Gang Niu, Xavier Cartoix¨¤, Alessandro Grossi, Cristian Zambelli, Piero Olivo, Eduardo Perez, Markus Andreas Schubert, Peter Zaumseil, Ioan Costina, Thomas Schroeder, Christian Wenger,  The Journal of Physical Chemistry C 121, 7005-7014 (2017).
  11.  Jie Shang, Wuhong Xue, Zhenghui Ji, Gang Liu, Xuhong Niu, Xiaohui Yi, Liang Pan, Qingfeng Zhan, Xiao-Hong Xu, Run-Wei Li,  Nanoscale ,  (2017).
  12.  Gang Niu, Hee-Dong Kim, Robin Roelofs, Eduardo Perez, Markus Andreas Schubert, Peter Zaumseil, Ioan Costina, Christian Wenger,  Scientific Reports 6, 28155 (2016).
  13.  Gang Niu, Pauline Calka, Matthias Auf der Maur, Francesco Santoni, Subhajit Guha, Mirko Fraschke, Philippe Hamoumou, Brice Gautier, Eduardo Perez, Christian Walczyk, Christian Wenger, Aldo Di Carlo, Lambert Alff, Thomas Schroeder,  Scientific Reports 6, 25757 (2016).
  14.  Dan Duncan, Blanka Magyari-Kope, Yoshio Nishi,  IEEE Electron Device Letters 37, 400-403 (2016).
  15.  D. Duncan, B. Magyari-Kope, Y. Nishi,  Applied Physics Letters 108, 043501 (2016).
  16.  B. Traore, P. Blaise, E. Vianello, L. Perniola, B. De Salvo, Y. Nishi,  IEEE Transactions on Electron Devices 63, 360-368 (2016).
  17.  B. Traore, P. Blaise, E. Vianello, H. Grampeix, S. Jeannot, L. Perniola, B. De Salvo, Y. Nishi,  IEEE Transactions on Electron Devices 62, 4029-4036 (2015).
  18.  Yuanyuan Shi, Yanfeng Ji, Fei Hui, Montserrat Nafria, Marc Porti, Gennadi Bersuker, Mario Lanza,  Advanced Electronic Materials ,  (2015).
  19.  Nicholas R. Williams, Marco Molinari, Stephen C. Parker, Mark T. Storr,  Journal of Nuclear Materials ,  (2015).
  20.  Mathieu C¨¦sar, Dongping Liu, Daniel Gall, Hong Guo,  Physical Review Applied 2, 044007 (2014).
  21.  E. Verrelli, D. Tsoukalas,  Solid-State Electronics 101, 95-105 (2014).

Citing: K.-H. Xue, P. Blaise, L. R. C. Fonseca, G. Molas, E. Vianello, B. Traor¨¦, B. De Salvo, G. Ghibaudo, and Y. Nishi, Applied Physics Letters 102, 201908 (2013).


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