Peer-reviewed journal papers | Conference
 
     
  2.  Y. Zheng, Y. Zheng, Z. Gao, J. Yuan, Y. Cheng*, Q. Zhong, T. Xin, Y. Wang, C. Liu, Y. Huang, R. Huang, X. Miao, K. Xue*, and H. Lyu*,
Atomic-scale characterization of defects generation during fatigue in ferroelectric Hf0.5Zr0.5O2 films: vacancy generation and lattice dislocation,

67th IEEE International Electron Devices Meeting (IEDM), December 2021.
 
     
  1.  Qing Luo, Jie Yu, Xumeng Zhang, Kan-Hao Xue, Yan Cheng, Tiancheng Gong, Hangbing Lv*, Xiaoxin Xu, Peng Yuan, Jiahao Yin, Lu Tai, Shibing Long, Qi Liu, Jing Li, Ming Liu*,
Nb1-xO2 based universal selector with ultra-high endurance (>1012), high speed (10ns) and excellent Vth stability,

2019 IEEE Symposium on VLSI Technology, T236-T237, June 2019.