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Peer-reviewed journal papers | Conference   *   Shell DFT-1/2 | Ferroelectrics
 
     
  137. (2023q) Zhao-Yi Yan, Zhan Hou, Kan-Hao Xue*, He Tian*, Tian Lu, Junying Xue, Fan Wu, Ruiting Zhao, Minghao Shao, Jianlan Yan, Anzhi Yan, Zhenze Wang, Penghui Shen, Mingyue Zhao, Xiangshui Miao, Zhaoyang Lin, Houfang Liu*, Yi Yang*, and Tian-Ling Ren*,

Landauer-QFLPS Model for Mixed Schottky-Ohmic Contact Two-Dimensional Transistors,

Advanced Science 10, 2303734 (2023).


Impact Factor: 17.521

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  136. (2023p) Zhao-Yi Yan, Zhan Hou, Fan Wu, Ruiting Zhao, Jianlan Yan, Anzhi Yan, Zhenze Wang, Kan-Hao Xue*, Houfang Liu*, He Tian*, Yi Yang*, and Tian-Ling Ren*,

A drain current formula for two-dimensional field-effect transistors with one-shot convergence algorithm,

2D Materials 10, 045026 (2023).


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  135. (2023o) Qiliang Zhu, Fan Ye, Wei Yan, Jingrun Zhu, Jianhua Shen*, Kan-Hao Xue, Yihua Zhu, and Chunzhong Li*,

Liquid-solid-Interpenetration Surface Reconstruction of Monodisperse Water Stabilized CsPbBr3/CsPb2Br5 Core/Shell Perovskite Nanocrystals,

Advanced Optical Materials 11, 2301211 (2023).


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  134. (2023n) Pu Ai, Fengjun Yan, Wen Dong*, Shi Liu, Junlei Zhao, Kan-Hao Xue, Syed Ul Hasnain Bakhtiar, Yilong Liu, Qi Ma, Ling Miao, Mengyuan Hua, Guangzu Zhang, Shenglin Jiang, Wei Luo, and Qiuyun Fu*,

Point-defect-driven flattened polar phonon bands in fluorite ferroelectrics,

npj Computational Materials 9, 119 (2023).


Impact Factor: 12.256

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  133. (2023m) Zhe Yang, Ziyan Yang, Long Liu, Xin Li, Junze Li, Changying Xiong, Xianliang Mai, Hao Tong, Yi Li, Kan-Hao Xue, Xiaoyong Xue, Ming Xu*, Dehui Li, Peng Zhou*, and Xiangshui Miao*,

Anisotropic mass transport enables distinct synaptic behaviors on 2D material surface,

Materials Today Electronics 5, 100047 (2023).


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  132. (2023l) Tong Jin, Zheng Liu, Jiajun Luo, Jun-Hui Yuan, Hanqi Wang, Zuoxiang Xie, Weicheng Pan, Haodi Wu, Kan-Hao Xue*, Linyue Liu, Zhanli Hu, Zhiping Zheng, Jiang Tang, and Guangda Niu*,

Self-wavelength shifting in two-dimensional perovskite for sensitive and fast gamma-ray detection,

Nature Communications 14, 2808 (2023).


Impact Factor: 17.694

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  131. (2023k) Jinhai Huang, Ge-Qi Mao, Kan-Hao Xue*, Shengxin Yang, Fan Ye, Huajun Sun, and Xiangshui Miao,

Impact of Zr substitution on the electronic structure of ferroelectric hafnia,

Journal of Applied Physics 133, 184101 (2023).


Impact Factor: 2.877

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  130. (2023j) Xinyu Huang, Luman Zhang, Lei Tong, Zheng Li, Zhuiri Peng, Runfeng Lin, Wenhao Shi, Kan-Hao Xue, Hongwei Dai, Hui Cheng, Danilo de Camargo Branco, Jianbin Xu, Junbo Han*, Gary J. Cheng*, Xiangshui Miao*, and Lei Ye*,

Manipulating exchange bias in 2D magnetic heterojunction for high-performance robust memory applications,

Nature Communications 14, 2190 (2023).


Impact Factor: 17.694

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  129. (2023i) Junhui Yuan, Kanhao Xue*, Xiangshui Miao, and Lei Ye*,

A family of flexible two-dimensional semiconductors: MgMX2Y6 (M = Ti/Zr/Hf; X = Si/Ge; Y = S/Se/Te),

Journal of Semiconductors 44, 042101 (2023).


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  128. (2023h) Ge-Qi Mao, Jun-Hui Yuan, Kan-Hao Xue*, Jinhai Huang, Shengxin Yang, and Xiangshui Miao,

In search of Pca21 phase ferroelectrics,

Journal of Physics: Materials 6, 024001 (2023).


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  127. (2023g) Hanli Cui, Shengxin Yang, Kan-Hao Xue*, Jinhai Huang, and Xiangshui Miao,

On the self-consistency of DFT-1/2,

Journal of Chemical Physics 158, 094103 (2023).


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  126. (2023f) Fan Ye, Kan-Hao Xue*, Heng Yu, Shengxin Yang, Jun-Hui Yuan, Rongchuan Gu, Ming Xu, and Xiangshui Miao,

In quest of low©\leakage dynamic random access memory enabled by doped TiO2 dielectrics,

Advanced Theory and Simulations 6, 2200614 (2023).


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  125. (2023e) Xueqiang Xiang, Li-Heng Li, Chen Chen, Guangwei Xu*, Fangzhou Liang, Pengju Tan, Xuanze Zhou, Weibing Hao, Xiaolong Zhao, Haiding Sun, Kan-Hao Xue, Nan Gao*, and Shibing Long,

Unintentional doping effect in Si-doped MOCVD ¶¬-Ga2O3 films: Shallow donor states,

Science China Materials 66, 748 (2023).


Impact Factor: 8.640

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  124. (2023d) Jun-Hui Yuan*, Kan-Hao Xue*, and Xiangshui Miao,

Two-dimensional ABC3 (A = Sc, Y; B = Al, Ga, In; C = S, Se, Te) with intrinsic electric field for photocatalytic water splitting,

International Journal of Hydrogen Energy 48, 5929 (2023).


Impact Factor: 7.139

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  123. (2023c) Jun-Hui Yuan, Ge-Qi Mao, Kan-Hao Xue*, Na Bai, Chengxu Wang, Yan Cheng, Hangbing Lyu, Huajun Sun, Xingsheng Wang, and Xiangshui Miao,

Ferroelectricity in HfO2 from a Coordination Number Perspective,

Chemistry of Materials 35, 94 (2023).


Impact Factor: 10.508

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  122. (2023b) Na Bai, Kan-Hao Xue*, Jinhai Huang, Jun-Hui Yuan, Wenlin Wang, Ge-Qi Mao, Lanqing Zou, Shengxin Yang, Hong Lu, Huajun Sun*, and Xiangshui Miao,

Designing Wake-Up Free Ferroelectric Capacitors Based on the HfO2/ZrO2 Superlattice Structure,

Advanced Electronic Materials 9, 2200737 (2023).


Impact Factor: 7.633

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  121. (2023a) Hua-Nan Liang, Na Bai, Lan-Qing Zou, Hua-Jun Sun*, Kan-Hao Xue, Wei-Ming Cheng, Hong Lu, and Xiang-Shui Miao,

Resistive Switching Characteristics of HfOx-Based Memristor by Inserting GeTe Layer,

IEEE Transactions on Electron Devices 70, 83 (2023).


Impact Factor: 3.221

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  120. (2022s) Hanli Cui, Jun-Hui Yuan*, Kan-Hao Xue, and Xiangshui Miao,

Tuning the Electronic and Mechanical Properties of Kagome Graphene via Hydrogenation,

Journal of Physical Chemistry C 126, 21426 (2022).


Impact Factor: 4.177

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  119. (2022r) Qing Wan*, Changjin Wan*, Huaqiang Wu, Yuchao Yang, Xiaohe Huang, Peng Zhou, Lin Chen, Tian-Yu Wang, Yi Li, Kan-Hao Xue, Yu-Hui He, Xiang-Shui Miao, Xi Li, Chenchen Xie, Houpeng Chen, Zhitang Song, Hong Wang, Yue Hao, Junyao Zhang, Jia Huang, Zheng Yu Ren, Li Qiang Zhu, Jianyu Du, Chen Ge, Yang Liu, Guanglong Ding, Ye Zhou, Su-Ting Han, Guosheng Wang, Xiao Yu, Bing Chen, Zhufei Chu, Lunyao Wang, Yinshui Xia, Chen Mu, Feng Lin, Chixiao Chen, Bojun Cheng, Yannan Xing, Weitao Zeng, Hong Chen, Lei Yu, Giacomo Indiveri, and Ning Qiao,

2022 roadmap on neuromorphic devices and applications research in China,

Neuromorphic Computing and Engineering 2, 042501 (2022).


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  118. (2022q) Nan Feng, Jian Han, Changpeng Lin, Zhengwei Ai, Chuwen Lan, Ke Bi*, Yuanhua Lin, Kan-Hao Xue*, and Ben Xu*,

Anti-Jahn-Teller effect induced ultrafast insulator to metal transition in perovskite BaBiO3,

npj Computational Materials 8, 226 (2022).


Impact Factor: 12.256

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  117. (2022p) Xiaoxin Liu, Lanqing Zou, Chenyang Huang, Na Bai, Kanhao Xue, Huajun Sun*, and Xiangshui Miao,

Analog Memristor-Based Dynamic Programmable Analog Filter,

Journal of Physics: Conference Series 2356, 012008 (2022).


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  116. (2022o) Li Li, Zuopai Zhou, Na Bai, Tao Wang, Kan-Hao Xue, Huajun Sun*, Qiang He, Weiming Cheng, and Xiangshui Miao,

Naive Bayes classifier based on memristor nonlinear conductance,

Microelectronics Journal 129, 105574 (2022).


Impact Factor: 1.992

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  115. (2022n) Li Yao*, Kan-Hao Xue*, Haoyu Tong, Chao Chen, Guangda Niu, Wenlong Yang, and Jiang Tang,

Dimensional Control of Chiral Antimony Halide Compounds for Enhanced Circular Dichroism,

Crystal Growth & Design 22, 5552 (2022).


Impact Factor: 4.010

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  114. (2022m) Li-Heng Li, Kan-Hao Xue*, Jun-Hui Yuan, Ge-Qi Mao, and Xiangshui Miao,

Hafnia for analog memristor: Influence of stoichiometry and crystalline structure,

Physical Review Materials 6, 084603 (2022).


Impact Factor: 3.98

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  113. (2022l) Xinyu Huang, Liheng Li, Shuaifei Zhao, Lei Tong, Zheng Li, Zhuiri Peng, Runfeng Lin, Li Zhou, Chang Peng, Kan-Hao Xue, Lijuan Chen, Gary J. Cheng*, Zhu Xiong*, and Lei Ye*,

MOF-Like 3D Graphene-Based Catalytic Membrane Fabricated by One-Step Laser Scribing for Robust Water Purification and Green Energy Production,

Nano-Micro Letters 14, 174 (2022).


Impact Factor: 23.655

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  112. (2022k) Shengxin Yang, Xiaobi Wang, Yongfeng Liu, Jia Wu, Wenhong Zhou, Xiangshui Miao, Li Huang*, and Kan-Hao Xue*,

Enabling ab initio material design of InAs/GaSb superlattices for infrared detection,

Physical Review Applied 18, 024058 (2022).


Impact Factor: 4.931

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  111. (2022j) Ge-Qi Mao, Zhao-Yi Yan, Kan-Hao Xue*, Zhengwei Ai, Shengxin Yang, Hanli Cui, Jun-Hui Yuan, Tian-Ling Ren, and Xiangshui Miao,

DFT-1/2 and shell DFT-1/2 methods: electronic structure calculation for semiconductors at LDA complexity,

Journal of Physics: Condensed Matter 34, 403001 (2022).


Impact Factor: 2.745

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  110. (2022i) Yiqin Gong, Fan Ye, Qiliang Zhu, Wei Yan, Jianhua Shen*, Kan-Hao Xue*, Yihua Zhu*, and Chunzhong Li,

Highly stable halide perovskites for photocatalysis via multi-dimensional structure design and in situ phase transition,

Dalton Transactions 51, 11316 (2022).


Impact Factor: 4.569

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  109. (2022h) Hanli Cui, Shengxin Yang, Jun-Hui Yuan*, Li-Heng Li, Fan Ye, Jinhai Huang, Kan-Hao Xue*, and Xiangshui Miao,

Shell DFT-1/2 method towards engineering accuracy for semiconductors: GGA versus LDA,

Computational Materials Science 213, 111669 (2022).


Impact Factor: 3.572

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  108. (2022g) Chengxu Wang, Ge-Qi Mao, Menghua Huang, Enming Huang, Zichong Zhang, Junhui Yuan, Weiming Cheng, Kan-Hao Xue, Xingsheng Wang*, and Xiangshui Miao,

HfOx/AlOy Superlattice-Like Memristive Synapse,

Advanced Science 9, 2201446 (2022).


Impact Factor: 17.521

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Copyright (2022) the authors, published by John Wiley & Sons, Inc., NJ, USA. This article is an OPEN ACCESS article and may be found at https://onlinelibrary.wiley.com/doi/10.1002/advs.202201446.
 
     
  107. (2022f) Yi-Fan Lu, Hao-Yang Li, Yi Li*, Li-Heng Li, Tian-Qing Wan, Ling Yang, Wen-Bing Zuo, Kan-Hao Xue, and Xiang-Shui Miao,

A High-Performance Ag/TiN/HfOx/HfOy/HfOx/Pt Diffusive Memristor for Calibration-Free True Random Number Generator,

Advanced Electronic Materials 8, 202200202 (2022).


Impact Factor: 7.633

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  106. (2022e) Zhao-Yi Yan, Kan-Hao Xue*, Zhan Hou, Yang Shen, He Tian, Yi Yang, and Tian-Ling Ren*,

Quasi-Fermi-Level Phase Space and its Applications in Ambipolar Two-Dimensional Field-Effect Transistors,

Physical Review Applied 17, 054027 (2022).


Impact Factor: 4.931

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  105. (2022d) Peng Yuan, Ge-Qi Mao, Yan Cheng, Kan-Hao Xue*, Yunzhe Zheng, Yang Yang, Pengfei Jiang, Yannan Xu, Yuan Wang, Yuhao Wang, Yaxin Ding, Yuting Chen, Zhiwei Dang, Lu Tai, Tiancheng Gong, Qing Luo*, Xiangshui Miao, and Qi Liu,

Microscopic mechanism of imprint in hafnium oxide-based ferroelectrics,

Nano Research 15, 3667 (2022).


Impact Factor: 10.269

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  104. (2022c) Chaochen Wang, Fan Ye, Jianhua Shen*, Kan-Hao Xue*, Yihua Zhu*, and Chunzhong Li,

In situ loading of Cu2O active sites on island-like copper for efficient electrochemical reduction of nitrate to ammonia,

ACS Applied Materials & Interfaces 14, 6680 (2022).


Impact Factor: 10.383

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  103. (2022b) Yan Cheng, Zhaomeng Gao, Kun Hee Ye, Hyeon Woo Park, Yonghui Zheng, Yunzhe Zheng, Jianfeng Gao, Min Hyuk Park, Jung-Hae Choi, Kan-Hao Xue, Cheol Seong Hwang*, and Hangbing Lyu*,

Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film,

Nature Communications 13, 645 (2022).


Impact Factor: 17.694

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  102. (2022a) Sheng-Guang Ren, Run Ni, Xiao-Di Huang, Yi Li*, Kan-Hao Xue, and Xiang-Shui Miao,

Pt/Al2O3/TaOX/Ta Self-Rectifying Memristor With Record-Low Operation Current (<2 pA), Low Power (fJ), and High Scalability,

IEEE Transactions on Electron Devices 69, 838 (2022).


Impact Factor: 3.221

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  101. (2021m) Ying Zhang, Ge-Qi Mao, Xiaolong Zhao*, Yu Li, Meiyun Zhang, Zuheng Wu, Wei Wu, Huajun Sun, Yizhong Guo, Lihua Wang, Xumeng Zhang, Qi Liu, Hangbing Lv, Kan-Hao Xue*, Guangwei Xu, Xiangshui Miao, Shibing Long*, and Ming Liu*,

Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging,

Nature Communications 12, 7232 (2021).


Impact Factor: 17.694

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  100. (2021l) Jun-Hui Yuan, Kan-Hao Xue*, Jiafu Wang, and Xiangshui Miao,

Designing stable 2D materials solely from VIA elements,

Applied Physics Letters 119, 223101 (2021).


Impact Factor: 3.971

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  99. (2021k) Li-Heng Li, Kan-Hao Xue*, Lan-Qing Zou, Jun-Hui Yuan, Huajun Sun, and Xiangshui Miao,

Multilevel switching in Mg-doped HfOx memristor through the mutual-ion effect,

Applied Physics Letters 119, 153505 (2021).


Impact Factor: 3.971

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  98. (2021j) Lei Tong, Zhuiri Peng, Runfeng Lin, Zheng Li, Yilun Wang, Xinyu Huang, Kan-Hao Xue, Hangyu Xu, Feng Liu, Hui Xia, Peng Wang, Mingsheng Xu, Wei Xiong, Weida Hu*, Jianbin Xu, Xinliang Zhang, Lei Ye*, and Xiangshui Miao,

2D materials®Cbased homogeneous transistor-memory architecture for neuromorphic hardware,

Science 373, 1353 (2021).


Impact Factor: 63.714

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  97. (2021i) Yuan Qin, Li-Heng Li, Zhaoan Yu, Feihong Wu, Danian Dong, Wei Guo, Zhongfang Zhang, Jun-Hui Yuan, Kan-Hao Xue*, Xiangshui Miao, and Shibing Long*,

Ultra-High Performance Amorphous Ga2O3 Photodetector Arrays for Solar-Blind Imaging,

Advanced Science 8, 2101106 (2021).


Impact Factor: 17.521

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  96. (2021h) Zhifang Tan, Jincong Pang, Guangda Niu*, Jun-Hui Yuan, Kan-Hao Xue, Xiangshui Miao, Weijian Tao, Haiming Zhu, Zhigang Li, Hongtao Zhao, Xinyuan Du, and Jiang Tang*,

Tailoring the electron and hole dimensionality to achieve efficient and stable metal halide perovskite scintillators,

Nanophotonics 10, 2249 (2021).


Impact Factor: 7.923

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  95. (2021g) Xinyuan Du, Jiapu Li, Guangda Niu*, Jun-Hui Yuan, Kan-Hao Xue, Mengling Xia, Weicheng Pan, Xiaofei Yang, Benpeng Zhu*, and Jiang Tang,

Lead halide perovskite for efficient optoacoustic conversion and application toward high-resolution ultrasound imaging,

Nature Communications 12, 3348 (2021).


Impact Factor: 17.694

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  94. (2021f) Long Liu, Yi Li, Xiaodi Huang, Jia Chen, Zhe Yang, Kan-Hao Xue, Ming Xu*, Huawei Chen, Peng Zhou*, and Xiangshui Miao*,

Low-Power Memristive Logic Device Enabled by Controllable Oxidation of 2D HfSe2 for In-Memory Computing,

Advanced Science 8, 2005038 (2021).


Impact Factor: 17.521

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  93. (2021e) Chundong Wang*, Yifan Tian*, Yu Gu, Kan-Hao Xue*, Huachuan Sun, Xiangshui Miao, and Liming Dai,

Plasma-induced moieties impart super-efficient activity to hydrogen evolution electrocatalysts,

Nano Energy 85, 106030 (2021).


Impact Factor: 19.069

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  92. (2021d) Tian-Qing Wan, Yi-Fan Lu, Jun-Hui Yuan, Hao-Yang Li, Yi Li*, Xiao-Di Huang, Kan-Hao Xue*, and Xiang-Shui Miao,

12.7 MA/cm2 on-current density and high uniformity realized in AgGeSe/Al2O3 selectors,

IEEE Electron Device Letters 42, 613 (2021).


Impact Factor: 4.816

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  91. (2021c) Yun-Lai Zhu, Kan-Hao Xue, Xiao-Min Cheng*, Chong Qiao, Jun-Hui Yuan, Li-Heng Li, and Xiang-Shui Miao,

Uniform and robust TiN/HfO2/Pt memristor through interfacial Al-doping engineering,

Applied Surface Science 550, 149274 (2021).


Impact Factor: 7.392

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  90. (2021b) Na Bai, Baoyi Tian, Ge-Qi Mao, Kan-Hao Xue*, Tao Wang, Jun-Hui Yuan, Xiaoxin Liu, Zhaonan Li, Shen Guo, Zuopai Zhou, Nian Liu, Hong Lu, Xiaodong Tang, Huajun Sun*, and Xiangshui Miao,

Homo-layer hafnia-based memristor with large analog switching window,

Applied Physics Letters 118, 043502 (2021).


Impact Factor: 3.971

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  89. (2021a) Huachuan Sun, Wei Zhang, Jian-Gang Li, Zhishan Li, Xiang Ao, Kan-Hao Xue, Kostya Ken Ostrikov, Jiang Tang, and Chundong Wang*,

Rh-engineered ultrathin NiFe-LDH nanosheets enable highly-efficient overall water splitting and urea electrolysis,

Applied Catalysis B: Environmental 284, 119740 (2021).


Impact Factor: 24.319

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  88. (2020p) Zhishan Li, Kan-Hao Xue, Jinsong Wang, Jian-Gang Li, Xiang Ao, Huachuan Sun, Xiaoqiang Song, Wen Lei, Yulin Cao, and Chundong Wang*,

Cation and anion co-doped perovskite nanofibers for highly efficient electrocatalytic oxygen evolution,

ACS Applied Materials & Interfaces 12, 41259 (2020).


Impact Factor: 10.383

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