Please cite the following references:
 Kan-Hao Xue, Jun-Hui Yuan, Leonardo R.C. Fonseca, and Xiang-Shui Miao, "Improved LDA-1/2 method for band structure calculations in covalent semiconductors", Computational Materials Science 153, 493 (2018).
 Luiz G. Ferreira, Marcelo Marques, and Lara K. Teles, "Approximation to density functional theory for the calculation of band gaps of semiconductors", Physical Review B 78, 125116 (2008).
 Jun-Hui Yuan, Qi Chen, Leonardo R. C. Fonseca, Ming Xu, Kan-Hao Xue and Xiang-Shui Miao, "GGA-1/2 self-energy correction for accurate band structure calculations: the case of resistive switching oxides", Journal of Physics Communications 2, 105005 (2018).
For information and references for the VASP code, please visit: http://www.vasp.at
The self-energy potentials were generated by atom/ion calculations using ATOM, a program for DFT calculations in atoms and pseudopotential generation, maintained by Alberto Garcia.