
Please cite the following references:
[1] KanHao Xue, JunHui Yuan, Leonardo R.C. Fonseca, and XiangShui Miao, "Improved LDA1/2 method for band structure calculations in covalent semiconductors", Computational Materials Science 153, 493 (2018).
[2] Luiz G. Ferreira, Marcelo Marques, and Lara K. Teles, "Approximation to density functional theory for the calculation of band gaps of semiconductors", Physical Review B 78, 125116 (2008).
[3] JunHui Yuan, Qi Chen, Leonardo R. C. Fonseca, Ming Xu, KanHao Xue and XiangShui Miao, "GGA1/2 selfenergy correction for accurate band structure calculations: the case of resistive switching oxides", Journal of Physics Communications 2, 105005 (2018).
For information and references for the ABINIT code, please visit: https://www.abinit.org
The selfenergy potentials were generated by atom/ion calculations using ATOM, a program for DFT calculations in atoms and pseudopotential generation, maintained by Alberto Garcia. 
